Integrated SiGe Detectors for Si Photonic Sensor Platforms
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low...
| Hlavní autoři: | , , , , , |
|---|---|
| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
MDPI AG
2017-08-01
|
| Edice: | Proceedings |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2504-3900/1/4/559 |
| Shrnutí: | In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography. |
|---|---|
| ISSN: | 2504-3900 |