Integrated SiGe Detectors for Si Photonic Sensor Platforms
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low...
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | English |
| Julkaistu: |
MDPI AG
2017-08-01
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| Sarja: | Proceedings |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/2504-3900/1/4/559 |