Integrated SiGe Detectors for Si Photonic Sensor Platforms

Integrated SiGe Detectors for Si Photonic Sensor Platforms

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low...

Bibliografske podrobnosti
Main Authors:	Grégory Pandraud, Silvana Milosavljevic, Amir Sammak, Matteo Cherchi, Aleksandar Jovic, Pasqualina Sarro
Format:	Article
Jezik:	English
Izdano:	MDPI AG 2017-08-01
Serija:	Proceedings
Teme:	Si photonics SiGe detectors optical coherence tomography
Online dostop:	https://www.mdpi.com/2504-3900/1/4/559

Podobne knjige/članki

SiGe field effect transistors
od: Terrence E. Whall, et al.
Izdano: (2001-03-01)

CVD growth of high speed SiGe HBTs using SiH4
od: Henry H. Radamson, et al.
Izdano: (2000-12-01)

SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
od: Cheng, Zhiyuan, et al.
Izdano: (2003)

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
od: Fitzgerald, Eugene A., et al.
Izdano: (2003)

SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
od: Cheng, Zhiyuan, et al.
Izdano: (2003)

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
od: Loh Ter-Hoe, et al.
Izdano: (2007-01-01)

FDTD analysis of direct optical integration between SiNx waveguides and Ge/SiGe multiple quantum wells on graded buffer for low-voltage optical modulators around the O-band wavelength
od: Inthanee Thongyim, et al.
Izdano: (2024-02-01)

SiGe bandgap tuning for high speed eam
od: Mastronardi, Lorenzo, et al.
Izdano: (2019)

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration
od: Zhong Fang, et al.
Izdano: (2021-12-01)

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
od: Yongliang Li, et al.
Izdano: (2021-06-01)

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors
od: Wei-Ting eLai, et al.
Izdano: (2016-02-01)

The main characteristics of SiGe HBTs at low temperatures
od: О. V. Dvornikov, et al.
Izdano: (2016-09-01)

The Design, Fabrication and Characterization of Grating Couplers for SiGe Photonic Integration Employing a Reflective Back Mirror
od: Qiang Huang, et al.
Izdano: (2022-10-01)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
od: Brehm M, et al.
Izdano: (2010-01-01)

Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
od: Yongliang Li, et al.
Izdano: (2021-01-01)

275 GHz Quadrature Receivers for THz-Band 6G Indoor Network in 130-nm SiGe Technology
od: Jeong-Moon Song, et al.
Izdano: (2023-01-01)

Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
od: Agnieszka Zaręba, et al.
Izdano: (2023-06-01)

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
od: Yi-Ju Yao, et al.
Izdano: (2023-04-01)

SiGe HBT wideband amplifier for millimeter wave applications
od: Marco Krˇcmar, et al.
Izdano: (2023-06-01)

Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K
od: Abel Garcia-Barrientos, et al.
Izdano: (2023-09-01)

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process
od: Peigen Zhou, et al.
Izdano: (2023-12-01)

Critical modeling issues of SiGe semiconductor devices
od: Vassil Palankovski, et al.
Izdano: (2004-03-01)

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface
od: Bollani Monica, et al.
Izdano: (2010-01-01)

The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared
od: Song Feng, et al.
Izdano: (2022-11-01)

Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology
od: Wei Qidi, et al.
Izdano: (2018-07-01)

Linear and nonlinear optical properties of dewetted SiGe islands
od: Luca Fagiani, et al.
Izdano: (2022-01-01)

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
od: Cui Jian, et al.
Izdano: (2011-01-01)

Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators
od: Luis Fonseca, et al.
Izdano: (2021-02-01)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
od: Merdzhanova T, et al.
Izdano: (2009-01-01)

Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review
od: Kaoru Toko, et al.
Izdano: (2024-07-01)

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
od: Tomas Ceponis, et al.
Izdano: (2020-12-01)

Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation
od: Yanrong Wang, et al.
Izdano: (2021-01-01)

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer
od: Isaacson, David M., et al.
Izdano: (2004)

Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands
od: Juang Jenh-Yih, et al.
Izdano: (2010-01-01)

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process
od: Xiaohong Cheng, et al.
Izdano: (2022-03-01)

Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure
od: Troy A. Hutchins-Delgado, et al.
Izdano: (2024-03-01)

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
od: Ferragut R, et al.
Izdano: (2010-01-01)

Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants
od: Antoine Pacco, et al.
Izdano: (2019-08-01)

The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors
od: O. V. Dvornikov, et al.
Izdano: (2017-12-01)

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
od: Yi-Ting Cheng, et al.
Izdano: (2022-04-01)