Integrated SiGe Detectors for Si Photonic Sensor Platforms
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low...
Päätekijät: | Grégory Pandraud, Silvana Milosavljevic, Amir Sammak, Matteo Cherchi, Aleksandar Jovic, Pasqualina Sarro |
---|---|
Aineistotyyppi: | Artikkeli |
Kieli: | English |
Julkaistu: |
MDPI AG
2017-08-01
|
Sarja: | Proceedings |
Aiheet: | |
Linkit: | https://www.mdpi.com/2504-3900/1/4/559 |
Samankaltaisia teoksia
-
SiGe field effect transistors
Tekijä: Terrence E. Whall, et al.
Julkaistu: (2001-03-01) -
CVD growth of high speed SiGe HBTs using SiH4
Tekijä: Henry H. Radamson, et al.
Julkaistu: (2000-12-01) -
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
Tekijä: Cheng, Zhiyuan, et al.
Julkaistu: (2003) -
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
Tekijä: Fitzgerald, Eugene A., et al.
Julkaistu: (2003) -
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
Tekijä: Cheng, Zhiyuan, et al.
Julkaistu: (2003)