A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source
This paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm<sup>2</sup> because it adopts a simple current source consisting of an <i>n</i>-type poly resistor and a PMOS transistor...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-09-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/10/899 |
| _version_ | 1797552350337957888 |
|---|---|
| author | Sangwoo Park Sangjin Byun |
| author_facet | Sangwoo Park Sangjin Byun |
| author_sort | Sangwoo Park |
| collection | DOAJ |
| description | This paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm<sup>2</sup> because it adopts a simple current source consisting of an <i>n</i>-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. Although this current source is based on a simple architecture, it has better temperature linearity than the conventional approach that generates a temperature-dependent current through a poly resistor using a feedback loop. This temperature sensor is designed in a 0.18 μm 1P6M CMOS process. In the post-layout simulations, the temperature error was measured within a range from −1.0 to +0.7 °C over the temperature range of 0 to 100 °C after two point calibration was carried out at 20 and 80 °C, respectively. The temperature resolution was set as 0.32 °C and the temperature to digital conversion rate was 50 kHz. The energy efficiency is 1.4 nJ/sample and the supply voltage sensitivity is 0.077 °C/mV at 27 °C while the supply voltage varies from 1.65 to 1.95 V. |
| first_indexed | 2024-03-10T15:59:46Z |
| format | Article |
| id | doaj.art-6cddde6a4feb45bb9730ff055bf64fd1 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T15:59:46Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-6cddde6a4feb45bb9730ff055bf64fd12023-11-20T15:23:32ZengMDPI AGMicromachines2072-666X2020-09-01111089910.3390/mi11100899A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current SourceSangwoo Park0Sangjin Byun1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaThis paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm<sup>2</sup> because it adopts a simple current source consisting of an <i>n</i>-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. Although this current source is based on a simple architecture, it has better temperature linearity than the conventional approach that generates a temperature-dependent current through a poly resistor using a feedback loop. This temperature sensor is designed in a 0.18 μm 1P6M CMOS process. In the post-layout simulations, the temperature error was measured within a range from −1.0 to +0.7 °C over the temperature range of 0 to 100 °C after two point calibration was carried out at 20 and 80 °C, respectively. The temperature resolution was set as 0.32 °C and the temperature to digital conversion rate was 50 kHz. The energy efficiency is 1.4 nJ/sample and the supply voltage sensitivity is 0.077 °C/mV at 27 °C while the supply voltage varies from 1.65 to 1.95 V.https://www.mdpi.com/2072-666X/11/10/899temperature sensortime domainthreshold voltagepoly resistortemperature errorCMOS integrated circuits |
| spellingShingle | Sangwoo Park Sangjin Byun A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source Micromachines temperature sensor time domain threshold voltage poly resistor temperature error CMOS integrated circuits |
| title | A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source |
| title_full | A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source |
| title_fullStr | A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source |
| title_full_unstemmed | A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source |
| title_short | A 0.026 mm<sup>2</sup> Time Domain CMOS Temperature Sensor with Simple Current Source |
| title_sort | 0 026 mm sup 2 sup time domain cmos temperature sensor with simple current source |
| topic | temperature sensor time domain threshold voltage poly resistor temperature error CMOS integrated circuits |
| url | https://www.mdpi.com/2072-666X/11/10/899 |
| work_keys_str_mv | AT sangwoopark a0026mmsup2suptimedomaincmostemperaturesensorwithsimplecurrentsource AT sangjinbyun a0026mmsup2suptimedomaincmostemperaturesensorwithsimplecurrentsource AT sangwoopark 0026mmsup2suptimedomaincmostemperaturesensorwithsimplecurrentsource AT sangjinbyun 0026mmsup2suptimedomaincmostemperaturesensorwithsimplecurrentsource |