Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability Characteristics
As the feature size of integrated circuits has been scaled down to 10 nm, the rapid increase in the electrical resistance of copper (Cu) metallization has become a critical issue. To alleviate the resistance increases of Cu lines, co-sputtered CoW and CoB alloying metals were investigated as conduct...
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| Online Access: | https://www.mdpi.com/1996-1944/16/4/1452 |
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| author | Yi-Lung Cheng Kai-Hsieh Wang Chih-Yen Lee Giin-Shan Chen Jau-Shiung Fang |
| author_facet | Yi-Lung Cheng Kai-Hsieh Wang Chih-Yen Lee Giin-Shan Chen Jau-Shiung Fang |
| author_sort | Yi-Lung Cheng |
| collection | DOAJ |
| description | As the feature size of integrated circuits has been scaled down to 10 nm, the rapid increase in the electrical resistance of copper (Cu) metallization has become a critical issue. To alleviate the resistance increases of Cu lines, co-sputtered CoW and CoB alloying metals were investigated as conductors and barriers in this study. Annealing CoM (M = W or B)/SiO<sub>2</sub>/<i>p</i>-Si structures reduced the resistivity of CoM alloys, removed sputtering-deposition-induced damage, and promoted adhesion. Additionally, both annealed CoW/SiO<sub>2</sub> or CoB/SiO<sub>2</sub> structures displayed a negligible V<sub>fb</sub> shift from capacitance-voltage measurements under electrical stress, revealing an effective barrier capacity, which is attributed to the formation of MO<sub>x</sub> layers at the CoM/SiO<sub>2</sub> interface. Based on the thermodynamics, the B<sub>2</sub>O<sub>3</sub> layer tends to form more easily than the WO<sub>x</sub> layer. Hence, the annealed CoB/SiO<sub>2</sub>/<i>p</i>-Si MIS capacitor had a higher capacitance and a larger breakdown strength did than the annealed CoW/SiO<sub>2</sub>/<i>p</i>-Si MIS capacitor. |
| first_indexed | 2024-03-11T08:30:26Z |
| format | Article |
| id | doaj.art-6ce11d2bb63c4ed9a5ff64a0592ee1e0 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T08:30:26Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-6ce11d2bb63c4ed9a5ff64a0592ee1e02023-11-16T21:49:59ZengMDPI AGMaterials1996-19442023-02-01164145210.3390/ma16041452Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability CharacteristicsYi-Lung Cheng0Kai-Hsieh Wang1Chih-Yen Lee2Giin-Shan Chen3Jau-Shiung Fang4Department of Electrical Engineering, National Chi Nan University, Puli, Nantou 54561, TaiwanDepartment of Electrical Engineering, National Chi Nan University, Puli, Nantou 54561, TaiwanDepartment of Electrical Engineering, National Chi Nan University, Puli, Nantou 54561, TaiwanDepartment of Materials Science and Engineering, Feng Chia University, Taichung 40724, TaiwanDepartment of Materials Science and Engineering, National Formosa University, Huwei, Yunlin 63201, TaiwanAs the feature size of integrated circuits has been scaled down to 10 nm, the rapid increase in the electrical resistance of copper (Cu) metallization has become a critical issue. To alleviate the resistance increases of Cu lines, co-sputtered CoW and CoB alloying metals were investigated as conductors and barriers in this study. Annealing CoM (M = W or B)/SiO<sub>2</sub>/<i>p</i>-Si structures reduced the resistivity of CoM alloys, removed sputtering-deposition-induced damage, and promoted adhesion. Additionally, both annealed CoW/SiO<sub>2</sub> or CoB/SiO<sub>2</sub> structures displayed a negligible V<sub>fb</sub> shift from capacitance-voltage measurements under electrical stress, revealing an effective barrier capacity, which is attributed to the formation of MO<sub>x</sub> layers at the CoM/SiO<sub>2</sub> interface. Based on the thermodynamics, the B<sub>2</sub>O<sub>3</sub> layer tends to form more easily than the WO<sub>x</sub> layer. Hence, the annealed CoB/SiO<sub>2</sub>/<i>p</i>-Si MIS capacitor had a higher capacitance and a larger breakdown strength did than the annealed CoW/SiO<sub>2</sub>/<i>p</i>-Si MIS capacitor.https://www.mdpi.com/1996-1944/16/4/1452cobalt (Co)cobalt-tungsten (CoW)cobalt-boron (CoB)electrical resistivitybarrierreliability |
| spellingShingle | Yi-Lung Cheng Kai-Hsieh Wang Chih-Yen Lee Giin-Shan Chen Jau-Shiung Fang Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability Characteristics Materials cobalt (Co) cobalt-tungsten (CoW) cobalt-boron (CoB) electrical resistivity barrier reliability |
| title | Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability Characteristics |
| title_full | Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability Characteristics |
| title_fullStr | Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability Characteristics |
| title_full_unstemmed | Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability Characteristics |
| title_short | Comparison of CoW/SiO<sub>2</sub> and CoB/SiO<sub>2</sub> Interconnects from the Perspective of Electrical and Reliability Characteristics |
| title_sort | comparison of cow sio sub 2 sub and cob sio sub 2 sub interconnects from the perspective of electrical and reliability characteristics |
| topic | cobalt (Co) cobalt-tungsten (CoW) cobalt-boron (CoB) electrical resistivity barrier reliability |
| url | https://www.mdpi.com/1996-1944/16/4/1452 |
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