| Summary: | This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (<i>V</i><sub>TH</sub>) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional electron gas (2DEG) channel under the PR p-GaN layer is depleted to withstand the drain bias. Therefore, the channel potential at the drain-side of the p-GaN layer is clamped to improve BV and <i>V</i><sub>TH</sub> stability. Compared with the conventional p-GaN HEMT (C-HEMT), simulation results show that the BV is improved by 120%, and the <i>V</i><sub>TH</sub> stability induced by high drain bias is increased by 490% for the same on-resistance. In addition, the influence of the PR p-GaN layers’ length, thickness, doping density on BV and <i>V</i><sub>TH</sub> stability is analyzed. The proposed device can be a good reference to improve breakdown voltage and threshold voltage stability for short-channel power p-GaN HEMTs.
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