Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs
This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (<i>V</i><sub>TH</sub>) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer)....
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| Format: | Article |
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MDPI AG
2022-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/2/176 |
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| author | Hongyue Wang Yijun Shi Yajie Xin Chang Liu Guoguang Lu Yun Huang |
| author_facet | Hongyue Wang Yijun Shi Yajie Xin Chang Liu Guoguang Lu Yun Huang |
| author_sort | Hongyue Wang |
| collection | DOAJ |
| description | This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (<i>V</i><sub>TH</sub>) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional electron gas (2DEG) channel under the PR p-GaN layer is depleted to withstand the drain bias. Therefore, the channel potential at the drain-side of the p-GaN layer is clamped to improve BV and <i>V</i><sub>TH</sub> stability. Compared with the conventional p-GaN HEMT (C-HEMT), simulation results show that the BV is improved by 120%, and the <i>V</i><sub>TH</sub> stability induced by high drain bias is increased by 490% for the same on-resistance. In addition, the influence of the PR p-GaN layers’ length, thickness, doping density on BV and <i>V</i><sub>TH</sub> stability is analyzed. The proposed device can be a good reference to improve breakdown voltage and threshold voltage stability for short-channel power p-GaN HEMTs. |
| first_indexed | 2024-03-09T21:25:41Z |
| format | Article |
| id | doaj.art-6cfc0c231dc84491b4ca78a8a9d98562 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T21:25:41Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-6cfc0c231dc84491b4ca78a8a9d985622023-11-23T21:09:48ZengMDPI AGMicromachines2072-666X2022-01-0113217610.3390/mi13020176Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTsHongyue Wang0Yijun Shi1Yajie Xin2Chang Liu3Guoguang Lu4Yun Huang5Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThis paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (<i>V</i><sub>TH</sub>) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional electron gas (2DEG) channel under the PR p-GaN layer is depleted to withstand the drain bias. Therefore, the channel potential at the drain-side of the p-GaN layer is clamped to improve BV and <i>V</i><sub>TH</sub> stability. Compared with the conventional p-GaN HEMT (C-HEMT), simulation results show that the BV is improved by 120%, and the <i>V</i><sub>TH</sub> stability induced by high drain bias is increased by 490% for the same on-resistance. In addition, the influence of the PR p-GaN layers’ length, thickness, doping density on BV and <i>V</i><sub>TH</sub> stability is analyzed. The proposed device can be a good reference to improve breakdown voltage and threshold voltage stability for short-channel power p-GaN HEMTs.https://www.mdpi.com/2072-666X/13/2/176breakdown voltagepartially recessedp-GaN HEMTshort-channel |
| spellingShingle | Hongyue Wang Yijun Shi Yajie Xin Chang Liu Guoguang Lu Yun Huang Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs Micromachines breakdown voltage partially recessed p-GaN HEMT short-channel |
| title | Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs |
| title_full | Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs |
| title_fullStr | Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs |
| title_full_unstemmed | Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs |
| title_short | Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs |
| title_sort | improving breakdown voltage and threshold voltage stability by clamping channel potential for short channel power p gan hemts |
| topic | breakdown voltage partially recessed p-GaN HEMT short-channel |
| url | https://www.mdpi.com/2072-666X/13/2/176 |
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