Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (<i>V</i><sub>TH</sub>) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer)....

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Bibliographic Details
Main Authors: Hongyue Wang, Yijun Shi, Yajie Xin, Chang Liu, Guoguang Lu, Yun Huang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Micromachines
Subjects:
breakdown voltage
partially recessed
p-GaN HEMT
short-channel
Online Access:https://www.mdpi.com/2072-666X/13/2/176

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