Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices
This study focuses on the preparation of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mat...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/19/4141 |
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| author | Raghad K. Aljurays Aicha Loucif Abdulrahman M. Albadri |
| author_facet | Raghad K. Aljurays Aicha Loucif Abdulrahman M. Albadri |
| author_sort | Raghad K. Aljurays |
| collection | DOAJ |
| description | This study focuses on the preparation of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">X</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub><mo>(</mo><mi mathvariant="normal">X</mi><mo>=</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><mo>,</mo><mi mathvariant="normal">M</mi><mi mathvariant="normal">n</mi><mo>,</mo><mi mathvariant="normal">C</mi><mi mathvariant="normal">r</mi><mo>,</mo><mi mathvariant="normal">N</mi><mi mathvariant="normal">i</mi><mo>)</mo></mrow></semantics></math></inline-formula> perovskite thin films using a simple set-up spin coating technique and the evaluation of their properties for application in switching memory devices. The properties of as-deposited films were thoroughly characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy, and a vibrating sample magnetometer (VSM). The results obtained revealed that the as-deposited films have a polycrystalline cubic structure. The film surfaces were uniform and densely packed without any voids, cracks, or pinholes. In addition, irregularly shaped grains were observed having an average size of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>140</mn></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>120</mn></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>89</mn></mrow></semantics></math></inline-formula>, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>70</mn><mo> </mo><mi mathvariant="normal">n</mi><mi mathvariant="normal">m</mi></mrow></semantics></math></inline-formula> for <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">M</mi><mi mathvariant="normal">n</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">C</mi><mi mathvariant="normal">r</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">N</mi><mi mathvariant="normal">i</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula> films, respectively. VSM analysis demonstrated that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula> film exhibited superior magnetic properties compared to the other films. Furthermore, memory devices with <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">A</mi><mi mathvariant="normal">u</mi><mo>/</mo><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">X</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub><mo>(</mo><mi mathvariant="normal">X</mi><mo>=</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><mo>,</mo><mi mathvariant="normal">M</mi><mi mathvariant="normal">n</mi><mo>,</mo><mi mathvariant="normal">C</mi><mi mathvariant="normal">r</mi><mo>,</mo><mi mathvariant="normal">N</mi><mi mathvariant="normal">i</mi><mo>)</mo><mo>/</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">T</mi><mi mathvariant="normal">O</mi></mrow></semantics></math></inline-formula> structures were fabricated, and their I-V characteristics were measured. In order to assess their performance, an endurance test was conducted. The findings indicated that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">A</mi><mi mathvariant="normal">u</mi><mo>/</mo><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub><mo>/</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">T</mi><mi mathvariant="normal">O</mi></mrow></semantics></math></inline-formula> device exhibited higher <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfrac bevelled="true"><mrow><msub><mrow><mi>R</mi></mrow><mrow><mi>H</mi><mi>R</mi><mi>S</mi></mrow></msub></mrow><mrow><msub><mrow><mi>R</mi></mrow><mrow><mi>L</mi><mi>R</mi><mi>S</mi></mrow></msub></mrow></mfrac></mrow></semantics></math></inline-formula> ratio (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>~</mo><msup><mrow><mn>7</mn><mo>×</mo><mn>10</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></semantics></math></inline-formula>), low Set/Reset voltages, lower power consumption (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2.7</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mo>−</mo><mn>4</mn></mrow></msup><mo> </mo><mi mathvariant="normal">W</mi></mrow></semantics></math></inline-formula>), and stable endurance with no significant degradation was observed in the LRS and HRS after 20 sweep cycles. These favorable parameters can be attributed to the reduced thickness, larger grain size, and excellent magnetic properties of the active-layer <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>. Moreover, the conduction mechanism of the fabricated devices was investigated, revealing that the conduction in the LRS is primarily dominated by Ohmic behavior, while the HRS exhibited different conduction mechanisms. |
| first_indexed | 2024-03-10T21:46:40Z |
| format | Article |
| id | doaj.art-6d022d7ddf34410ea54d3176bbf67c49 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T21:46:40Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-6d022d7ddf34410ea54d3176bbf67c492023-11-19T14:17:49ZengMDPI AGElectronics2079-92922023-10-011219414110.3390/electronics12194141Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory DevicesRaghad K. Aljurays0Aicha Loucif1Abdulrahman M. Albadri2Department of Physics, College of Science, Qassim University, Buraidah 51452, Saudi ArabiaDepartment of Physics, College of Science, Qassim University, Buraidah 51452, Saudi ArabiaMicroelectronics and Semiconductors Institute, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi ArabiaThis study focuses on the preparation of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">X</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub><mo>(</mo><mi mathvariant="normal">X</mi><mo>=</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><mo>,</mo><mi mathvariant="normal">M</mi><mi mathvariant="normal">n</mi><mo>,</mo><mi mathvariant="normal">C</mi><mi mathvariant="normal">r</mi><mo>,</mo><mi mathvariant="normal">N</mi><mi mathvariant="normal">i</mi><mo>)</mo></mrow></semantics></math></inline-formula> perovskite thin films using a simple set-up spin coating technique and the evaluation of their properties for application in switching memory devices. The properties of as-deposited films were thoroughly characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy, and a vibrating sample magnetometer (VSM). The results obtained revealed that the as-deposited films have a polycrystalline cubic structure. The film surfaces were uniform and densely packed without any voids, cracks, or pinholes. In addition, irregularly shaped grains were observed having an average size of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>140</mn></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>120</mn></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>89</mn></mrow></semantics></math></inline-formula>, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>70</mn><mo> </mo><mi mathvariant="normal">n</mi><mi mathvariant="normal">m</mi></mrow></semantics></math></inline-formula> for <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">M</mi><mi mathvariant="normal">n</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">C</mi><mi mathvariant="normal">r</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">N</mi><mi mathvariant="normal">i</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula> films, respectively. VSM analysis demonstrated that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula> film exhibited superior magnetic properties compared to the other films. Furthermore, memory devices with <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">A</mi><mi mathvariant="normal">u</mi><mo>/</mo><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">X</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub><mo>(</mo><mi mathvariant="normal">X</mi><mo>=</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><mo>,</mo><mi mathvariant="normal">M</mi><mi mathvariant="normal">n</mi><mo>,</mo><mi mathvariant="normal">C</mi><mi mathvariant="normal">r</mi><mo>,</mo><mi mathvariant="normal">N</mi><mi mathvariant="normal">i</mi><mo>)</mo><mo>/</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">T</mi><mi mathvariant="normal">O</mi></mrow></semantics></math></inline-formula> structures were fabricated, and their I-V characteristics were measured. In order to assess their performance, an endurance test was conducted. The findings indicated that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">A</mi><mi mathvariant="normal">u</mi><mo>/</mo><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub><mo>/</mo><mi mathvariant="normal">F</mi><mi mathvariant="normal">T</mi><mi mathvariant="normal">O</mi></mrow></semantics></math></inline-formula> device exhibited higher <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfrac bevelled="true"><mrow><msub><mrow><mi>R</mi></mrow><mrow><mi>H</mi><mi>R</mi><mi>S</mi></mrow></msub></mrow><mrow><msub><mrow><mi>R</mi></mrow><mrow><mi>L</mi><mi>R</mi><mi>S</mi></mrow></msub></mrow></mfrac></mrow></semantics></math></inline-formula> ratio (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>~</mo><msup><mrow><mn>7</mn><mo>×</mo><mn>10</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></semantics></math></inline-formula>), low Set/Reset voltages, lower power consumption (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2.7</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mo>−</mo><mn>4</mn></mrow></msup><mo> </mo><mi mathvariant="normal">W</mi></mrow></semantics></math></inline-formula>), and stable endurance with no significant degradation was observed in the LRS and HRS after 20 sweep cycles. These favorable parameters can be attributed to the reduced thickness, larger grain size, and excellent magnetic properties of the active-layer <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">L</mi><mi mathvariant="normal">a</mi><mi mathvariant="normal">F</mi><mi mathvariant="normal">e</mi><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></semantics></math></inline-formula>. Moreover, the conduction mechanism of the fabricated devices was investigated, revealing that the conduction in the LRS is primarily dominated by Ohmic behavior, while the HRS exhibited different conduction mechanisms.https://www.mdpi.com/2079-9292/12/19/4141LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) perovskitecrystal structureoptical propertieselectronic deviceresistive switching |
| spellingShingle | Raghad K. Aljurays Aicha Loucif Abdulrahman M. Albadri Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices Electronics LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) perovskite crystal structure optical properties electronic device resistive switching |
| title | Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices |
| title_full | Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices |
| title_fullStr | Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices |
| title_full_unstemmed | Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices |
| title_short | Synthesis of LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices |
| title_sort | synthesis of laxo sub 3 sub x fe mn cr ni thin films using a simple spin coating set up for resistive switching memory devices |
| topic | LaXO<sub>3</sub> (X = Fe, Mn, Cr, Ni) perovskite crystal structure optical properties electronic device resistive switching |
| url | https://www.mdpi.com/2079-9292/12/19/4141 |
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