Impact ionization in silicon at low charge-carrier energies
Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0164405 |