Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer
<p class="ArticleAnnotation">Researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that source cur...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2020-01-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3956 |
| _version_ | 1811206916725014528 |
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| author | S. Novosyadly V. Gryga A. Pavlyshyn V. Lukovkin |
| author_facet | S. Novosyadly V. Gryga A. Pavlyshyn V. Lukovkin |
| author_sort | S. Novosyadly |
| collection | DOAJ |
| description | <p class="ArticleAnnotation">Researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that source current changing with the type of deep centers, change of value is determined by two factors: change width of volumetric charge barrier contact layer and width of dipole layer on border section of active heterojunction layer of Si-wafer. This construction of MESFET recommended using as a photodetector for optical receiver module in fiber optic transmission systems.</p> |
| first_indexed | 2024-04-12T03:56:09Z |
| format | Article |
| id | doaj.art-6d26fc14e1d948248cffbff2cdbeb238 |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-04-12T03:56:09Z |
| publishDate | 2020-01-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-6d26fc14e1d948248cffbff2cdbeb2382022-12-22T03:48:50ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892020-01-0120445345610.15330/pcss.20.4.453-4563432Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon WaferS. Novosyadly0V. Gryga1A. Pavlyshyn2V. Lukovkin3Прикарпатський національний університет імені Василя СтефаникаПрикарпатський національний університет імені Василя СтефаникаПрикарпатський національний університет імені Василя СтефаникаПрикарпатський національний університет імені Василя Стефаника<p class="ArticleAnnotation">Researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that source current changing with the type of deep centers, change of value is determined by two factors: change width of volumetric charge barrier contact layer and width of dipole layer on border section of active heterojunction layer of Si-wafer. This construction of MESFET recommended using as a photodetector for optical receiver module in fiber optic transmission systems.</p>http://journals.pu.if.ua/index.php/pcss/article/view/3956птшарсенідгалійгетероперехід |
| spellingShingle | S. Novosyadly V. Gryga A. Pavlyshyn V. Lukovkin Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer Фізика і хімія твердого тіла птш арсенідгалій гетероперехід |
| title | Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer |
| title_full | Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer |
| title_fullStr | Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer |
| title_full_unstemmed | Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer |
| title_short | Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer |
| title_sort | photosensitivity of mesfets on epitaxy layers of gaas with monocrystalline silicon wafer |
| topic | птш арсенідгалій гетероперехід |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/3956 |
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