Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements
High-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring the accumulation kinetics and stability of proton-...
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9784931/ |
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| author | J. Szivos L. Balogh I. Rajta G. U. L. Nagy Z. T. Gaal V. Samu K. Takefumi Z. Zolnai |
| author_facet | J. Szivos L. Balogh I. Rajta G. U. L. Nagy Z. T. Gaal V. Samu K. Takefumi Z. Zolnai |
| author_sort | J. Szivos |
| collection | DOAJ |
| description | High-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring the accumulation kinetics and stability of proton-implantation induced defects and their influence on the optical and electrical properties of Si achieved increased attention both in technological process control and scientific research. We show that photo-modulated-reflectance (PMR) is effective technique to measure very low defect concentrations in the ppb-ppm range in high energy proton implanted silicon. After ion irradiation, the as-implanted dilute damage structure may lead to long term changes of the defect distribution and the formation of defect compounds due to mobility of point defects at room temperature. Moreover, low-mass hydrogen atoms may move significantly faster at room temperature compared to heavier dopants. We show that PMR is capable to detect differences in implanted proton dose with high sensitivity in a wide dose range, and, on a longer time scale, allows to follow changes in free carrier generation and recombination processes through the measurement of the long term decay of the PMR signal which is related to the sample response based on electro-optic and thermo-optic effects. Our experiments may pave the way toward high precision process control of device structure fabrication which utilizes the high-energy hydrogen implantation step. Also, our aim is to gain insight into the main processes underlying the dose dependent change and long-term decay of the PMR signal in high energy proton implanted Si. |
| first_indexed | 2024-04-11T11:29:22Z |
| format | Article |
| id | doaj.art-6d3f508396884b1bb121f734104a64c1 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-11T11:29:22Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-6d3f508396884b1bb121f734104a64c12022-12-22T04:26:11ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011076176810.1109/JEDS.2022.31788669784931Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance MeasurementsJ. Szivos0L. Balogh1I. Rajta2https://orcid.org/0000-0002-5140-2574G. U. L. Nagy3https://orcid.org/0000-0003-3172-5736Z. T. Gaal4V. Samu5K. Takefumi6Z. Zolnai7https://orcid.org/0000-0003-3457-7679Semilab Semiconductor Physics Laboratory Ltd., Budapest, HungarySemilab Semiconductor Physics Laboratory Ltd., Budapest, HungaryTandetron Laboratory, Institute for Nuclear Research (ATOMKI), Debrecen, HungaryTandetron Laboratory, Institute for Nuclear Research (ATOMKI), Debrecen, HungaryTandetron Laboratory, Institute for Nuclear Research (ATOMKI), Debrecen, HungarySemilab Semiconductor Physics Laboratory Ltd., Budapest, HungarySemilab Japan KK, Kanagawa, JapanSemilab Semiconductor Physics Laboratory Ltd., Budapest, HungaryHigh-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring the accumulation kinetics and stability of proton-implantation induced defects and their influence on the optical and electrical properties of Si achieved increased attention both in technological process control and scientific research. We show that photo-modulated-reflectance (PMR) is effective technique to measure very low defect concentrations in the ppb-ppm range in high energy proton implanted silicon. After ion irradiation, the as-implanted dilute damage structure may lead to long term changes of the defect distribution and the formation of defect compounds due to mobility of point defects at room temperature. Moreover, low-mass hydrogen atoms may move significantly faster at room temperature compared to heavier dopants. We show that PMR is capable to detect differences in implanted proton dose with high sensitivity in a wide dose range, and, on a longer time scale, allows to follow changes in free carrier generation and recombination processes through the measurement of the long term decay of the PMR signal which is related to the sample response based on electro-optic and thermo-optic effects. Our experiments may pave the way toward high precision process control of device structure fabrication which utilizes the high-energy hydrogen implantation step. Also, our aim is to gain insight into the main processes underlying the dose dependent change and long-term decay of the PMR signal in high energy proton implanted Si.https://ieeexplore.ieee.org/document/9784931/Siliconhydrogen implantationdefect concentrationphoto-modulated-reflectance (PMR)decay process |
| spellingShingle | J. Szivos L. Balogh I. Rajta G. U. L. Nagy Z. T. Gaal V. Samu K. Takefumi Z. Zolnai Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements IEEE Journal of the Electron Devices Society Silicon hydrogen implantation defect concentration photo-modulated-reflectance (PMR) decay process |
| title | Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements |
| title_full | Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements |
| title_fullStr | Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements |
| title_full_unstemmed | Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements |
| title_short | Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements |
| title_sort | monitoring of dose dependent damage in mev energy hydrogen implanted silicon by photo modulated reflectance measurements |
| topic | Silicon hydrogen implantation defect concentration photo-modulated-reflectance (PMR) decay process |
| url | https://ieeexplore.ieee.org/document/9784931/ |
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