An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens
The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-01-01
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| Series: | Biosensors |
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| Online Access: | https://www.mdpi.com/2079-6374/12/1/24 |
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| author | Donghoon Kim Bo Jin Sol-A Kim Wonyeong Choi Seonghwan Shin Jiwon Park Won-Bo Shim Kihyun Kim Jeong-Soo Lee |
| author_facet | Donghoon Kim Bo Jin Sol-A Kim Wonyeong Choi Seonghwan Shin Jiwon Park Won-Bo Shim Kihyun Kim Jeong-Soo Lee |
| author_sort | Donghoon Kim |
| collection | DOAJ |
| description | The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7 V, low subthreshold swing of <70 mV/dec, and low gate leakage of <10 pA. Surface functionalization and immobilization of antibodies were performed for the selective detection of PAs. The voltage-related sensitivity (<i>S<sub>V</sub></i>) showed a constant behavior from the subthreshold regime to the linear regime. The current-related sensitivity (<i>S<sub>I</sub></i>) was high in the subthreshold regime and then significantly decreased as the drain current increased. The limit of detection (LOD) was calculated to be as low as 25 pg/mL based on <i>S<sub>I</sub></i> characteristics, which is the lowest value reported to date in the literature for various sensor methodologies. The Si-EGT showed selective detection of PA through a non-specific control test. These results confirm that Si-EGT is a high-sensitivity and low-power biosensor for PA detection. |
| first_indexed | 2024-03-10T01:49:05Z |
| format | Article |
| id | doaj.art-6d532c8a1c224e63910d4d1b421e2390 |
| institution | Directory Open Access Journal |
| issn | 2079-6374 |
| language | English |
| last_indexed | 2024-03-10T01:49:05Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Biosensors |
| spelling | doaj.art-6d532c8a1c224e63910d4d1b421e23902023-11-23T13:08:08ZengMDPI AGBiosensors2079-63742022-01-011212410.3390/bios12010024An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut AllergensDonghoon Kim0Bo Jin1Sol-A Kim2Wonyeong Choi3Seonghwan Shin4Jiwon Park5Won-Bo Shim6Kihyun Kim7Jeong-Soo Lee8Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, KoreaDivision of Applied Life Science, Graduate School, Gyeongsang National University, Jinju 52828, KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, KoreaDepartment of Food Science and Technology, Gyeongsang National University, Jinju 52828, KoreaDivision of Electronics Engineering, Jeonbuk National University, Jeonju 54896, KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, KoreaThe highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7 V, low subthreshold swing of <70 mV/dec, and low gate leakage of <10 pA. Surface functionalization and immobilization of antibodies were performed for the selective detection of PAs. The voltage-related sensitivity (<i>S<sub>V</sub></i>) showed a constant behavior from the subthreshold regime to the linear regime. The current-related sensitivity (<i>S<sub>I</sub></i>) was high in the subthreshold regime and then significantly decreased as the drain current increased. The limit of detection (LOD) was calculated to be as low as 25 pg/mL based on <i>S<sub>I</sub></i> characteristics, which is the lowest value reported to date in the literature for various sensor methodologies. The Si-EGT showed selective detection of PA through a non-specific control test. These results confirm that Si-EGT is a high-sensitivity and low-power biosensor for PA detection.https://www.mdpi.com/2079-6374/12/1/24BioFETbiosensorelectrolyte gatelimit of detectionpeanut allergen |
| spellingShingle | Donghoon Kim Bo Jin Sol-A Kim Wonyeong Choi Seonghwan Shin Jiwon Park Won-Bo Shim Kihyun Kim Jeong-Soo Lee An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens Biosensors BioFET biosensor electrolyte gate limit of detection peanut allergen |
| title | An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens |
| title_full | An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens |
| title_fullStr | An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens |
| title_full_unstemmed | An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens |
| title_short | An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens |
| title_sort | ultrasensitive silicon based electrolyte gated transistor for the detection of peanut allergens |
| topic | BioFET biosensor electrolyte gate limit of detection peanut allergen |
| url | https://www.mdpi.com/2079-6374/12/1/24 |
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