Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs
Abstract A technique for the transfer-free growth of 2-inch wafer-scale patterned graphene directly on GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat spreaders is synthesized directly on GaN by PECVD at only 600 °C deposition temperature and within 3 min gr...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-10-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-023-00434-9 |
| _version_ | 1797559332079927296 |
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| author | Fangzhu Xiong Jie Sun Penghao Tang Weiling Guo Yibo Dong Zaifa Du Shiwei Feng Xuan Li |
| author_facet | Fangzhu Xiong Jie Sun Penghao Tang Weiling Guo Yibo Dong Zaifa Du Shiwei Feng Xuan Li |
| author_sort | Fangzhu Xiong |
| collection | DOAJ |
| description | Abstract A technique for the transfer-free growth of 2-inch wafer-scale patterned graphene directly on GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat spreaders is synthesized directly on GaN by PECVD at only 600 °C deposition temperature and within 3 min growth time. Co acts as both the catalyst for graphene growth and the dry etching mask for GaN mesas, which greatly improves the efficiency of the semiconductor device process. Elegantly, the graphene growth is in accordance with the shape of Co, which offers a lithography-free patterning technique of the graphene. Afterward, using our penetration etching method through the PMMA and graphene layers, the Co is peacefully removed, and in-situ Ohmic contact is achieved between the graphene and p-GaN where the contact resistivity is only 0.421 Ω cm2. The graphene sheet resistance is as low as 631.2 Ω sq−1. The device is also superior to the counterpart graphene-free LED in terms of heat spreading behavior, as evidenced by the lower junction temperature and thermal resistance. Most importantly, the developed technique produces graphene with excellent performance and is intrinsically more scalable, controllable, and semiconductor industry compatible than traditionally transferred graphene. |
| first_indexed | 2024-03-10T17:43:49Z |
| format | Article |
| id | doaj.art-6d7239aff772403faf6601e13a58facd |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-03-10T17:43:49Z |
| publishDate | 2023-10-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-6d7239aff772403faf6601e13a58facd2023-11-20T09:35:40ZengNature Portfolionpj 2D Materials and Applications2397-71322023-10-01711710.1038/s41699-023-00434-9Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDsFangzhu Xiong0Jie Sun1Penghao Tang2Weiling Guo3Yibo Dong4Zaifa Du5Shiwei Feng6Xuan Li7Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of TechnologyFujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou UniversityKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of TechnologyKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of TechnologyKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of TechnologyKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of TechnologyKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of TechnologyKey Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of TechnologyAbstract A technique for the transfer-free growth of 2-inch wafer-scale patterned graphene directly on GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat spreaders is synthesized directly on GaN by PECVD at only 600 °C deposition temperature and within 3 min growth time. Co acts as both the catalyst for graphene growth and the dry etching mask for GaN mesas, which greatly improves the efficiency of the semiconductor device process. Elegantly, the graphene growth is in accordance with the shape of Co, which offers a lithography-free patterning technique of the graphene. Afterward, using our penetration etching method through the PMMA and graphene layers, the Co is peacefully removed, and in-situ Ohmic contact is achieved between the graphene and p-GaN where the contact resistivity is only 0.421 Ω cm2. The graphene sheet resistance is as low as 631.2 Ω sq−1. The device is also superior to the counterpart graphene-free LED in terms of heat spreading behavior, as evidenced by the lower junction temperature and thermal resistance. Most importantly, the developed technique produces graphene with excellent performance and is intrinsically more scalable, controllable, and semiconductor industry compatible than traditionally transferred graphene.https://doi.org/10.1038/s41699-023-00434-9 |
| spellingShingle | Fangzhu Xiong Jie Sun Penghao Tang Weiling Guo Yibo Dong Zaifa Du Shiwei Feng Xuan Li Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs npj 2D Materials and Applications |
| title | Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs |
| title_full | Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs |
| title_fullStr | Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs |
| title_full_unstemmed | Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs |
| title_short | Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs |
| title_sort | transfer free rapid growth of 2 inch wafer scale patterned graphene as transparent conductive electrodes and heat spreaders for gan leds |
| url | https://doi.org/10.1038/s41699-023-00434-9 |
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