Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

We investigated the sensing characteristics of NO<sub>2</sub> gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of t...

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Bibliographic Details
Main Authors:	Van Cuong Nguyen, Kwangeun Kim, Hyungtak Kim
Format:	Article
Language:	English
Published:	MDPI AG 2021-04-01
Series:	Micromachines
Subjects:	gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor high electron mobility transistor
Online Access:	https://www.mdpi.com/2072-666X/12/4/400

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