Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping
Abstract Metal halide perovskites have attracted a considerable amount of research attention with significant progress made in the field of optoelectronics. Despite their outstanding electrical characteristics, structural defects impede their potential performance due to the polycrystalline nature o...
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Wiley-VCH
2023-03-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202201014 |
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| author | Jae‐Hyeok Cho Ji‐Young Go Tan Tan Bui Seunguk Mun Yunseok Kim Kyunghan Ahn Yong‐Young Noh Myung‐Gil Kim |
| author_facet | Jae‐Hyeok Cho Ji‐Young Go Tan Tan Bui Seunguk Mun Yunseok Kim Kyunghan Ahn Yong‐Young Noh Myung‐Gil Kim |
| author_sort | Jae‐Hyeok Cho |
| collection | DOAJ |
| description | Abstract Metal halide perovskites have attracted a considerable amount of research attention with significant progress made in the field of optoelectronics. Despite their outstanding electrical characteristics, structural defects impede their potential performance due to the polycrystalline nature of solution‐processed perovskite films. Herein, the effective p‐type doping and defect passivation of phenethylammonium tin iodide ((PEA)2SnI4) perovskite films using xanthate additives as a sulfur source is reported. Sulfur can be introduced to the iodine vacancies mainly at the grain boundaries of the perovskite film, passivating the electrical defects originating from the iodine vacancy and increasing the hole concentration. The Fermi‐level shift toward the valence band maximum of the sulfur‐doped perovskite film is confirmed using ultraviolet photoemission spectroscopy, resulting in p‐type doping. Finally, the electrical performance improvement for the 0.2% sulfur‐doped (PEA)2SnI4 thin‐film transistor with a mobility of 1.45 cm2 V−1 s−1, an on/off ratio of 2.9 × 105 is demonstrated, and hysteresis of 10 V is reduced. |
| first_indexed | 2024-03-12T21:52:12Z |
| format | Article |
| id | doaj.art-6e4269ce3bbf48f2866b97c974225b0f |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:52:12Z |
| publishDate | 2023-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-6e4269ce3bbf48f2866b97c974225b0f2023-07-26T01:36:08ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-03-0193n/an/a10.1002/aelm.202201014Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur DopingJae‐Hyeok Cho0Ji‐Young Go1Tan Tan Bui2Seunguk Mun3Yunseok Kim4Kyunghan Ahn5Yong‐Young Noh6Myung‐Gil Kim7School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaDepartment of Chemical Engineering Pohang University of Science and Technology 77 Cheongam‐Ro Nam‐Gu Pohang 37673 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaDepartment of Chemical Engineering Pohang University of Science and Technology 77 Cheongam‐Ro Nam‐Gu Pohang 37673 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaAbstract Metal halide perovskites have attracted a considerable amount of research attention with significant progress made in the field of optoelectronics. Despite their outstanding electrical characteristics, structural defects impede their potential performance due to the polycrystalline nature of solution‐processed perovskite films. Herein, the effective p‐type doping and defect passivation of phenethylammonium tin iodide ((PEA)2SnI4) perovskite films using xanthate additives as a sulfur source is reported. Sulfur can be introduced to the iodine vacancies mainly at the grain boundaries of the perovskite film, passivating the electrical defects originating from the iodine vacancy and increasing the hole concentration. The Fermi‐level shift toward the valence band maximum of the sulfur‐doped perovskite film is confirmed using ultraviolet photoemission spectroscopy, resulting in p‐type doping. Finally, the electrical performance improvement for the 0.2% sulfur‐doped (PEA)2SnI4 thin‐film transistor with a mobility of 1.45 cm2 V−1 s−1, an on/off ratio of 2.9 × 105 is demonstrated, and hysteresis of 10 V is reduced.https://doi.org/10.1002/aelm.202201014defect passivationmetal halide perovskitesp‐type dopingthin‐film transistorxanthates |
| spellingShingle | Jae‐Hyeok Cho Ji‐Young Go Tan Tan Bui Seunguk Mun Yunseok Kim Kyunghan Ahn Yong‐Young Noh Myung‐Gil Kim Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping Advanced Electronic Materials defect passivation metal halide perovskites p‐type doping thin‐film transistor xanthates |
| title | Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping |
| title_full | Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping |
| title_fullStr | Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping |
| title_full_unstemmed | Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping |
| title_short | Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping |
| title_sort | anion vacancy defect passivation of a 2d layered tin based perovskite thin film transistor with sulfur doping |
| topic | defect passivation metal halide perovskites p‐type doping thin‐film transistor xanthates |
| url | https://doi.org/10.1002/aelm.202201014 |
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