Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin Temperature
Previous cryogenic electronics studies are mostly at 77K and 4.2K. Cryogenic characterization of a 0.18μm standard bulk CMOS technology (operating voltages: 1.8V and 5V) is presented in this paper. Several NMOS and PMOS devices with different width to length ratios (W/L) were extensively...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9163160/ |
| _version_ | 1818329541339250688 |
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| author | Teng-Teng Lu Zhen Li Chao Luo Jun Xu Weicheng Kong Guoping Guo |
| author_facet | Teng-Teng Lu Zhen Li Chao Luo Jun Xu Weicheng Kong Guoping Guo |
| author_sort | Teng-Teng Lu |
| collection | DOAJ |
| description | Previous cryogenic electronics studies are mostly at 77K and 4.2K. Cryogenic characterization of a 0.18μm standard bulk CMOS technology (operating voltages: 1.8V and 5V) is presented in this paper. Several NMOS and PMOS devices with different width to length ratios (W/L) were extensively tested and characterized under various bias conditions at sub-kelvin temperature. In addition to devices dc characteristics, the kink effect and current overshoot phenomenon are observed and discussed at sub-kelvin temperature. Especially, the current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of MOSFET devices (1.8V W/L = 10μm/10μm) at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures. |
| first_indexed | 2024-12-13T12:49:42Z |
| format | Article |
| id | doaj.art-6e44bc5e34b64a9db4350445f68cbe31 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T12:49:42Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-6e44bc5e34b64a9db4350445f68cbe312022-12-21T23:45:22ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01889790410.1109/JEDS.2020.30152659163160Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin TemperatureTeng-Teng Lu0https://orcid.org/0000-0003-4355-6191Zhen Li1https://orcid.org/0000-0002-6276-8643Chao Luo2Jun Xu3Weicheng Kong4Guoping Guo5https://orcid.org/0000-0002-2179-9507Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, ChinaKey Laboratory of Quantum Information, University of Science and Technology of China, Hefei, ChinaKey Laboratory of Quantum Information, University of Science and Technology of China, Hefei, ChinaDepartment of Physics, University of Science and Technology of China, Hefei, ChinaDepartment of Quantum Hardware, Origin Quantum Computing Company Limited, Hefei, ChinaKey Laboratory of Quantum Information, University of Science and Technology of China, Hefei, ChinaPrevious cryogenic electronics studies are mostly at 77K and 4.2K. Cryogenic characterization of a 0.18μm standard bulk CMOS technology (operating voltages: 1.8V and 5V) is presented in this paper. Several NMOS and PMOS devices with different width to length ratios (W/L) were extensively tested and characterized under various bias conditions at sub-kelvin temperature. In addition to devices dc characteristics, the kink effect and current overshoot phenomenon are observed and discussed at sub-kelvin temperature. Especially, the current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of MOSFET devices (1.8V W/L = 10μm/10μm) at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.https://ieeexplore.ieee.org/document/9163160/Cryogenic CMOScharacterizationmodelingkink effectcurrent overshootsub-Kelvin temperature |
| spellingShingle | Teng-Teng Lu Zhen Li Chao Luo Jun Xu Weicheng Kong Guoping Guo Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin Temperature IEEE Journal of the Electron Devices Society Cryogenic CMOS characterization modeling kink effect current overshoot sub-Kelvin temperature |
| title | Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin Temperature |
| title_full | Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin Temperature |
| title_fullStr | Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin Temperature |
| title_full_unstemmed | Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin Temperature |
| title_short | Characterization and Modeling of 0.18<italic>μ</italic>m Bulk CMOS Technology at Sub-Kelvin Temperature |
| title_sort | characterization and modeling of 0 18 italic x03bc italic m bulk cmos technology at sub kelvin temperature |
| topic | Cryogenic CMOS characterization modeling kink effect current overshoot sub-Kelvin temperature |
| url | https://ieeexplore.ieee.org/document/9163160/ |
| work_keys_str_mv | AT tengtenglu characterizationandmodelingof018italicx03bcitalicmbulkcmostechnologyatsubkelvintemperature AT zhenli characterizationandmodelingof018italicx03bcitalicmbulkcmostechnologyatsubkelvintemperature AT chaoluo characterizationandmodelingof018italicx03bcitalicmbulkcmostechnologyatsubkelvintemperature AT junxu characterizationandmodelingof018italicx03bcitalicmbulkcmostechnologyatsubkelvintemperature AT weichengkong characterizationandmodelingof018italicx03bcitalicmbulkcmostechnologyatsubkelvintemperature AT guopingguo characterizationandmodelingof018italicx03bcitalicmbulkcmostechnologyatsubkelvintemperature |