Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2
Topological insulators could be ideal materials for use in electronic devices but complications arising at the interface with metallic electrodes degrades performance values. Here, the authors propose VSe2 as an electrode material investigating the charge dynamics and interface quality using ultrafa...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-07-01
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| Series: | Communications Physics |
| Online Access: | https://doi.org/10.1038/s42005-022-00961-9 |
| _version_ | 1818474074637074432 |
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| author | Tae Gwan Park Jae Ho Jeon Seung-Hyun Chun Sunghun Lee Fabian Rotermund |
| author_facet | Tae Gwan Park Jae Ho Jeon Seung-Hyun Chun Sunghun Lee Fabian Rotermund |
| author_sort | Tae Gwan Park |
| collection | DOAJ |
| description | Topological insulators could be ideal materials for use in electronic devices but complications arising at the interface with metallic electrodes degrades performance values. Here, the authors propose VSe2 as an electrode material investigating the charge dynamics and interface quality using ultrafast transient reflectance measurements and demonstrating the preservation of Dirac surface states of the topological insulator. |
| first_indexed | 2024-04-14T04:31:41Z |
| format | Article |
| id | doaj.art-6e53812701294133ac6669319b0f2bda |
| institution | Directory Open Access Journal |
| issn | 2399-3650 |
| language | English |
| last_indexed | 2024-04-14T04:31:41Z |
| publishDate | 2022-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Physics |
| spelling | doaj.art-6e53812701294133ac6669319b0f2bda2022-12-22T02:12:01ZengNature PortfolioCommunications Physics2399-36502022-07-015111110.1038/s42005-022-00961-9Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2Tae Gwan Park0Jae Ho Jeon1Seung-Hyun Chun2Sunghun Lee3Fabian Rotermund4Department of Physics, Korea Advanced Institute of Science and Technology (KAIST)Department of Physics and Astronomy, Sejong UniversityDepartment of Physics and Astronomy, Sejong UniversityDepartment of Physics and Astronomy, Sejong UniversityDepartment of Physics, Korea Advanced Institute of Science and Technology (KAIST)Topological insulators could be ideal materials for use in electronic devices but complications arising at the interface with metallic electrodes degrades performance values. Here, the authors propose VSe2 as an electrode material investigating the charge dynamics and interface quality using ultrafast transient reflectance measurements and demonstrating the preservation of Dirac surface states of the topological insulator.https://doi.org/10.1038/s42005-022-00961-9 |
| spellingShingle | Tae Gwan Park Jae Ho Jeon Seung-Hyun Chun Sunghun Lee Fabian Rotermund Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2 Communications Physics |
| title | Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2 |
| title_full | Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2 |
| title_fullStr | Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2 |
| title_full_unstemmed | Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2 |
| title_short | Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2 |
| title_sort | ultrafast interfacial carrier dynamics and persistent topological surface states of bi2se3 in heterojunctions with vse2 |
| url | https://doi.org/10.1038/s42005-022-00961-9 |
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