Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET
A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n...
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MDPI AG
2022-04-01
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| author | Soojin Kim Yeeun Roh Younguk Choi Ah Hyun Jun Hojun Seo Byeong-Kwon Ju |
| author_facet | Soojin Kim Yeeun Roh Younguk Choi Ah Hyun Jun Hojun Seo Byeong-Kwon Ju |
| author_sort | Soojin Kim |
| collection | DOAJ |
| description | A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n-regimes is crucial for applying MoTe<sub>2</sub>-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe<sub>2</sub> field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe<sub>2</sub> thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe<sub>2</sub> FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe<sub>2</sub>-based FETs for use in logic inverters with 2D semiconductors. |
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| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T11:12:57Z |
| publishDate | 2022-04-01 |
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| spelling | doaj.art-6e633e2981844e2b9071fba8c33ee0d32023-12-01T00:39:53ZengMDPI AGApplied Sciences2076-34172022-04-01128384010.3390/app12083840Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FETSoojin Kim0Yeeun Roh1Younguk Choi2Ah Hyun Jun3Hojun Seo4Byeong-Kwon Ju5Department of Micro/Nano System, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, KoreaSchool of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, KoreaSchool of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, KoreaSchool of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, KoreaDepartment of Electronic Engineering, Hanyang University, Seoul 04763, KoreaSchool of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, KoreaA stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n-regimes is crucial for applying MoTe<sub>2</sub>-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe<sub>2</sub> field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe<sub>2</sub> thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe<sub>2</sub> FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe<sub>2</sub>-based FETs for use in logic inverters with 2D semiconductors.https://www.mdpi.com/2076-3417/12/8/3840MoTe<sub>2</sub>transition metal dichalcogenidesfield-effect transistorsdopingthreshold voltagecharge neutrality |
| spellingShingle | Soojin Kim Yeeun Roh Younguk Choi Ah Hyun Jun Hojun Seo Byeong-Kwon Ju Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET Applied Sciences MoTe<sub>2</sub> transition metal dichalcogenides field-effect transistors doping threshold voltage charge neutrality |
| title | Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET |
| title_full | Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET |
| title_fullStr | Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET |
| title_full_unstemmed | Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET |
| title_short | Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET |
| title_sort | air annealing process for threshold voltage tuning of mote sub 2 sub fet |
| topic | MoTe<sub>2</sub> transition metal dichalcogenides field-effect transistors doping threshold voltage charge neutrality |
| url | https://www.mdpi.com/2076-3417/12/8/3840 |
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