| Summary: | The resistive random-access memory (RRAM) with multi-level storage capability has been considered one of the most promising emerging devices to mimic synaptic behavior and accelerate analog computations. In this study, we investigated the reset-first bipolar resistive switching (RS) and multi-level characteristics of a LaNiO<sub>3−x</sub> thin film deposited using a reactive magnetron co-sputtering method. Polycrystalline phases of LaNiO<sub>3</sub> (LNO), without La<sub>2</sub>O<sub>3</sub> and NiO phases, were observed at similar fractions of Ni and La at a constant partial pressure of oxygen. The relative chemical proportions of Ni<sup>3+</sup> and Ni<sup>2+</sup> ions in LaNiO<sub>3−x</sub> indicated that it was an oxygen-deficient LaNiO<sub>3−x</sub> thin film, exhibiting RS behavior, compared to LNO without Ni<sup>2+</sup> ions. The TiN/LaNiO<sub>3−x</sub>/Pt devices exhibited gradual resistance changes under various DC/AC voltage sweeps and consecutive pulse modes. The nonlinearity values of the conductance, measured via constant-pulse programming, were 0.15 for potentiation and 0.35 for depression, indicating the potential of the as-fabricated devices as analog computing devices. The LaNiO<sub>3−x</sub>-based device could reach multi-level states without an electroforming step and is a promising candidate for state-of-the-art RS memory and synaptic devices for neuromorphic computing.
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