Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO<sub>3−x</sub>) Thin Films

Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO<sub>3−x</sub>) Thin Films

The resistive random-access memory (RRAM) with multi-level storage capability has been considered one of the most promising emerging devices to mimic synaptic behavior and accelerate analog computations. In this study, we investigated the reset-first bipolar resistive switching (RS) and multi-level...

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Bibliographic Details
Main Authors:	Daewoo Kim, Jeongwoo Lee, Jaeyeon Kim, Hyunchul Sohn
Format:	Article
Language:	English
Published:	MDPI AG 2023-07-01
Series:	Materials
Subjects:	resistive random-access memory rare-earth nickelates LaNiO<sub>3</sub> reset-first resistive switching synaptic device potentiation
Online Access:	https://www.mdpi.com/1996-1944/16/14/4992

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