Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5
The crystal structure of the excitonic insulator Ta2NiSe5 has been investigated under a range of pressures, as determined by the complementary analysis of both single-crystal and powder synchrotron X-ray diffraction measurements. The monoclinic ambient-pressure excitonic insulator phase II transform...
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International Union of Crystallography
2018-03-01
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Online Access: | http://scripts.iucr.org/cgi-bin/paper?S2052252517018334 |
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author | Akitoshi Nakano Kento Sugawara Shinya Tamura Naoyuki Katayama Kazuyuki Matsubayashi Taku Okada Yoshiya Uwatoko Kouji Munakata Akiko Nakao Hajime Sagayama Reiji Kumai Kunihisa Sugimoto Naoyuki Maejima Akihiko Machida Tetsu Watanuki Hiroshi Sawa |
author_facet | Akitoshi Nakano Kento Sugawara Shinya Tamura Naoyuki Katayama Kazuyuki Matsubayashi Taku Okada Yoshiya Uwatoko Kouji Munakata Akiko Nakao Hajime Sagayama Reiji Kumai Kunihisa Sugimoto Naoyuki Maejima Akihiko Machida Tetsu Watanuki Hiroshi Sawa |
author_sort | Akitoshi Nakano |
collection | DOAJ |
description | The crystal structure of the excitonic insulator Ta2NiSe5 has been investigated under a range of pressures, as determined by the complementary analysis of both single-crystal and powder synchrotron X-ray diffraction measurements. The monoclinic ambient-pressure excitonic insulator phase II transforms upon warming or under a modest pressure to give the semiconducting C-centred orthorhombic phase I. At higher pressures (i.e. >3 GPa), transformation to the primitive orthorhombic semimetal phase III occurs. This transformation from phase I to phase III is a pressure-induced first-order phase transition, which takes place through coherent sliding between weakly coupled layers. This structural phase transition is significantly influenced by Coulombic interactions in the geometric arrangement between interlayer Se ions. Furthermore, upon cooling, phase III transforms into the monoclinic phase IV, which is analogous to the excitonic insulator phase II. Finally, the excitonic interactions appear to be retained despite the observed layer sliding transition. |
first_indexed | 2024-12-20T14:54:11Z |
format | Article |
id | doaj.art-6e8283c647794c1aa11b5cbb078fb134 |
institution | Directory Open Access Journal |
issn | 2052-2525 |
language | English |
last_indexed | 2024-12-20T14:54:11Z |
publishDate | 2018-03-01 |
publisher | International Union of Crystallography |
record_format | Article |
series | IUCrJ |
spelling | doaj.art-6e8283c647794c1aa11b5cbb078fb1342022-12-21T19:36:54ZengInternational Union of CrystallographyIUCrJ2052-25252018-03-015215816510.1107/S2052252517018334fc5022Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5Akitoshi Nakano0Kento Sugawara1Shinya Tamura2Naoyuki Katayama3Kazuyuki Matsubayashi4Taku Okada5Yoshiya Uwatoko6Kouji Munakata7Akiko Nakao8Hajime Sagayama9Reiji Kumai10Kunihisa Sugimoto11Naoyuki Maejima12Akihiko Machida13Tetsu Watanuki14Hiroshi Sawa15Department of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanUniversity of Electro-Communications, Chofu, Tokyo 182-8585, JapanInstitute for Solid State Physics (ISSP), University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, JapanInstitute for Solid State Physics (ISSP), University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, JapanComprehensive Research Organization for Science and Society (CROSS), Tokai, Ibaraki 319-1106, JapanComprehensive Research Organization for Science and Society (CROSS), Tokai, Ibaraki 319-1106, JapanPhoton Factory, IMSS, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801, JapanPhoton Factory, IMSS, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801, JapanJapan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198, JapanSynchrotron Radiation Research Center (SRRC), National Institutes for Quantum and Radiological Science and Technology (QST), 1-1-1 Kouto, Sayo, Hyogo 679-5148, JapanSynchrotron Radiation Research Center (SRRC), National Institutes for Quantum and Radiological Science and Technology (QST), 1-1-1 Kouto, Sayo, Hyogo 679-5148, JapanSynchrotron Radiation Research Center (SRRC), National Institutes for Quantum and Radiological Science and Technology (QST), 1-1-1 Kouto, Sayo, Hyogo 679-5148, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanThe crystal structure of the excitonic insulator Ta2NiSe5 has been investigated under a range of pressures, as determined by the complementary analysis of both single-crystal and powder synchrotron X-ray diffraction measurements. The monoclinic ambient-pressure excitonic insulator phase II transforms upon warming or under a modest pressure to give the semiconducting C-centred orthorhombic phase I. At higher pressures (i.e. >3 GPa), transformation to the primitive orthorhombic semimetal phase III occurs. This transformation from phase I to phase III is a pressure-induced first-order phase transition, which takes place through coherent sliding between weakly coupled layers. This structural phase transition is significantly influenced by Coulombic interactions in the geometric arrangement between interlayer Se ions. Furthermore, upon cooling, phase III transforms into the monoclinic phase IV, which is analogous to the excitonic insulator phase II. Finally, the excitonic interactions appear to be retained despite the observed layer sliding transition.http://scripts.iucr.org/cgi-bin/paper?S2052252517018334inorganic materialshigh-pressure single-crystal X-ray diffractionexcitonic insulators |
spellingShingle | Akitoshi Nakano Kento Sugawara Shinya Tamura Naoyuki Katayama Kazuyuki Matsubayashi Taku Okada Yoshiya Uwatoko Kouji Munakata Akiko Nakao Hajime Sagayama Reiji Kumai Kunihisa Sugimoto Naoyuki Maejima Akihiko Machida Tetsu Watanuki Hiroshi Sawa Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5 IUCrJ inorganic materials high-pressure single-crystal X-ray diffraction excitonic insulators |
title | Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5 |
title_full | Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5 |
title_fullStr | Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5 |
title_full_unstemmed | Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5 |
title_short | Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5 |
title_sort | pressure induced coherent sliding layer transition in the excitonic insulator ta2nise5 |
topic | inorganic materials high-pressure single-crystal X-ray diffraction excitonic insulators |
url | http://scripts.iucr.org/cgi-bin/paper?S2052252517018334 |
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