Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5

The crystal structure of the excitonic insulator Ta2NiSe5 has been investigated under a range of pressures, as determined by the complementary analysis of both single-crystal and powder synchrotron X-ray diffraction measurements. The monoclinic ambient-pressure excitonic insulator phase II transform...

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Main Authors: Akitoshi Nakano, Kento Sugawara, Shinya Tamura, Naoyuki Katayama, Kazuyuki Matsubayashi, Taku Okada, Yoshiya Uwatoko, Kouji Munakata, Akiko Nakao, Hajime Sagayama, Reiji Kumai, Kunihisa Sugimoto, Naoyuki Maejima, Akihiko Machida, Tetsu Watanuki, Hiroshi Sawa
Format: Article
Language:English
Published: International Union of Crystallography 2018-03-01
Series:IUCrJ
Subjects:
Online Access:http://scripts.iucr.org/cgi-bin/paper?S2052252517018334
_version_ 1818971552150978560
author Akitoshi Nakano
Kento Sugawara
Shinya Tamura
Naoyuki Katayama
Kazuyuki Matsubayashi
Taku Okada
Yoshiya Uwatoko
Kouji Munakata
Akiko Nakao
Hajime Sagayama
Reiji Kumai
Kunihisa Sugimoto
Naoyuki Maejima
Akihiko Machida
Tetsu Watanuki
Hiroshi Sawa
author_facet Akitoshi Nakano
Kento Sugawara
Shinya Tamura
Naoyuki Katayama
Kazuyuki Matsubayashi
Taku Okada
Yoshiya Uwatoko
Kouji Munakata
Akiko Nakao
Hajime Sagayama
Reiji Kumai
Kunihisa Sugimoto
Naoyuki Maejima
Akihiko Machida
Tetsu Watanuki
Hiroshi Sawa
author_sort Akitoshi Nakano
collection DOAJ
description The crystal structure of the excitonic insulator Ta2NiSe5 has been investigated under a range of pressures, as determined by the complementary analysis of both single-crystal and powder synchrotron X-ray diffraction measurements. The monoclinic ambient-pressure excitonic insulator phase II transforms upon warming or under a modest pressure to give the semiconducting C-centred orthorhombic phase I. At higher pressures (i.e. >3 GPa), transformation to the primitive orthorhombic semimetal phase III occurs. This transformation from phase I to phase III is a pressure-induced first-order phase transition, which takes place through coherent sliding between weakly coupled layers. This structural phase transition is significantly influenced by Coulombic interactions in the geometric arrangement between interlayer Se ions. Furthermore, upon cooling, phase III transforms into the monoclinic phase IV, which is analogous to the excitonic insulator phase II. Finally, the excitonic interactions appear to be retained despite the observed layer sliding transition.
first_indexed 2024-12-20T14:54:11Z
format Article
id doaj.art-6e8283c647794c1aa11b5cbb078fb134
institution Directory Open Access Journal
issn 2052-2525
language English
last_indexed 2024-12-20T14:54:11Z
publishDate 2018-03-01
publisher International Union of Crystallography
record_format Article
series IUCrJ
spelling doaj.art-6e8283c647794c1aa11b5cbb078fb1342022-12-21T19:36:54ZengInternational Union of CrystallographyIUCrJ2052-25252018-03-015215816510.1107/S2052252517018334fc5022Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5Akitoshi Nakano0Kento Sugawara1Shinya Tamura2Naoyuki Katayama3Kazuyuki Matsubayashi4Taku Okada5Yoshiya Uwatoko6Kouji Munakata7Akiko Nakao8Hajime Sagayama9Reiji Kumai10Kunihisa Sugimoto11Naoyuki Maejima12Akihiko Machida13Tetsu Watanuki14Hiroshi Sawa15Department of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanUniversity of Electro-Communications, Chofu, Tokyo 182-8585, JapanInstitute for Solid State Physics (ISSP), University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, JapanInstitute for Solid State Physics (ISSP), University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, JapanComprehensive Research Organization for Science and Society (CROSS), Tokai, Ibaraki 319-1106, JapanComprehensive Research Organization for Science and Society (CROSS), Tokai, Ibaraki 319-1106, JapanPhoton Factory, IMSS, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801, JapanPhoton Factory, IMSS, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801, JapanJapan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198, JapanSynchrotron Radiation Research Center (SRRC), National Institutes for Quantum and Radiological Science and Technology (QST), 1-1-1 Kouto, Sayo, Hyogo 679-5148, JapanSynchrotron Radiation Research Center (SRRC), National Institutes for Quantum and Radiological Science and Technology (QST), 1-1-1 Kouto, Sayo, Hyogo 679-5148, JapanSynchrotron Radiation Research Center (SRRC), National Institutes for Quantum and Radiological Science and Technology (QST), 1-1-1 Kouto, Sayo, Hyogo 679-5148, JapanDepartment of Applied Physics, Nagoya University, Nagoya, 464-8603, JapanThe crystal structure of the excitonic insulator Ta2NiSe5 has been investigated under a range of pressures, as determined by the complementary analysis of both single-crystal and powder synchrotron X-ray diffraction measurements. The monoclinic ambient-pressure excitonic insulator phase II transforms upon warming or under a modest pressure to give the semiconducting C-centred orthorhombic phase I. At higher pressures (i.e. >3 GPa), transformation to the primitive orthorhombic semimetal phase III occurs. This transformation from phase I to phase III is a pressure-induced first-order phase transition, which takes place through coherent sliding between weakly coupled layers. This structural phase transition is significantly influenced by Coulombic interactions in the geometric arrangement between interlayer Se ions. Furthermore, upon cooling, phase III transforms into the monoclinic phase IV, which is analogous to the excitonic insulator phase II. Finally, the excitonic interactions appear to be retained despite the observed layer sliding transition.http://scripts.iucr.org/cgi-bin/paper?S2052252517018334inorganic materialshigh-pressure single-crystal X-ray diffractionexcitonic insulators
spellingShingle Akitoshi Nakano
Kento Sugawara
Shinya Tamura
Naoyuki Katayama
Kazuyuki Matsubayashi
Taku Okada
Yoshiya Uwatoko
Kouji Munakata
Akiko Nakao
Hajime Sagayama
Reiji Kumai
Kunihisa Sugimoto
Naoyuki Maejima
Akihiko Machida
Tetsu Watanuki
Hiroshi Sawa
Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5
IUCrJ
inorganic materials
high-pressure single-crystal X-ray diffraction
excitonic insulators
title Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5
title_full Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5
title_fullStr Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5
title_full_unstemmed Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5
title_short Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5
title_sort pressure induced coherent sliding layer transition in the excitonic insulator ta2nise5
topic inorganic materials
high-pressure single-crystal X-ray diffraction
excitonic insulators
url http://scripts.iucr.org/cgi-bin/paper?S2052252517018334
work_keys_str_mv AT akitoshinakano pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT kentosugawara pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT shinyatamura pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT naoyukikatayama pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT kazuyukimatsubayashi pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT takuokada pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT yoshiyauwatoko pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT koujimunakata pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT akikonakao pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT hajimesagayama pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT reijikumai pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT kunihisasugimoto pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT naoyukimaejima pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT akihikomachida pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT tetsuwatanuki pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5
AT hiroshisawa pressureinducedcoherentslidinglayertransitionintheexcitonicinsulatorta2nise5