AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping eff...

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Bibliographic Details
Main Authors: Justinas Jorudas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, Irmantas Kašalynas
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Micromachines
Subjects:
AlGaN/GaN
SiC
high electron mobility transistor
Schottky barrier diode
breakdown field
noise
Online Access:https://www.mdpi.com/2072-666X/11/12/1131

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