Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use it in a circuit simulator in this case SmartSpice f...

Full description

Bibliographic Details
Main Authors: Y. Hernandez-Barrios, J. N. Gaspar-Angeles, M. Estrada, B. Iniguez, A. Cerdeira
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Circuit simulator
dynamic model
Verilog-A
capacitances model
Online Access:https://ieeexplore.ieee.org/document/9296235/

Similar Items

Similar Items