FABRICATION AND STUDY CHARACTERISTICS OF CDO/SI HETEROJUNCTIONDETECTOR BY CBD TECHNIQUE
In this work CdO/Si heterojunction detector were fabricated by depositing CdO thin film on p-type single crystal silicon wafers by chemical bath deposition technique(CBD) . The effect of cadmium ion concentration on the structural properties of deposited film and optoelectronic characteristics of fa...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Anbar
2013-11-01
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| Series: | مجلة جامعة الانبار للعلوم الصرفة |
| Subjects: | |
| Online Access: | https://juaps.uoanbar.edu.iq/article_83056_5428433b99ffec92cbed085ba2274ea3.pdf |
| Summary: | In this work CdO/Si heterojunction detector were fabricated by depositing CdO thin film on p-type single crystal silicon wafers by chemical bath deposition technique(CBD) . The effect of cadmium ion concentration on the structural properties of deposited film and optoelectronic characteristics of fabricated detector has been considered in this work . From the x-ray diffraction result, it is shown that the CdO film has a single crystalline in cubic structure with preferential orientation along the (311) crystal plane. The -voltage characteristics under dark result, it is shown that ideality factor of heterojunction has higher value(n˃1).From current-voltage characteristics under illuminations result, it is shown that photocurrent increase with increasing cadmium ion concentration in solution. The capacitance–voltage characteristic shows a typical abrupt heterojunction. The optoelectronic characteristics shows the CdO/Si detector has good spectral responsivity in visible and NIR with higher peak responsivity at 900 nm were found 0.38 A/W. |
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| ISSN: | 1991-8941 2706-6703 |