Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector
Abstract 2D materials are considered as potential candidates for the next generation of optoelectronic materials. However, their optical absorption is typically weak due to thickness limitations, greatly restricting the photodetection capabilities of devices. To enhance the photoelectric gain of 2D...
| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-12-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300496 |
| _version_ | 1797352560702521344 |
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| author | Qianru Zhao Haoran Yan Xudong Wang Yan Chen Shukui Zhang Shuaiqin Wu Xinning Huang Yunxiang Di Ke Xiong Jinhua Zeng Hanxue Jiao Tie Lin Hu He Jun Ge Xiangjian Meng Hong Shen Junhao Chu Jianlu Wang |
| author_facet | Qianru Zhao Haoran Yan Xudong Wang Yan Chen Shukui Zhang Shuaiqin Wu Xinning Huang Yunxiang Di Ke Xiong Jinhua Zeng Hanxue Jiao Tie Lin Hu He Jun Ge Xiangjian Meng Hong Shen Junhao Chu Jianlu Wang |
| author_sort | Qianru Zhao |
| collection | DOAJ |
| description | Abstract 2D materials are considered as potential candidates for the next generation of optoelectronic materials. However, their optical absorption is typically weak due to thickness limitations, greatly restricting the photodetection capabilities of devices. To enhance the photoelectric gain of 2D materials or devices and improve detection sensitivity, various modulation methods such as strain, electric field, and magnetic field are commonly introduced. Among them, surface acoustic wave (SAW) represents a unique and effective modulation approach. In this study, photodetectors are fabricated based on few‐layer MoS2 on a SAW delay line on a LiTaO3 substrate. The interaction between SAW and MoS2 successfully manipulates the optoelectronic performance of the MoS2‐based devices. Under the influence of SAW, the dark current of the devices is significantly reduced by more than two orders of magnitude, while the photocurrent remains almost unchanged, resulting in excellent photoresponse performance. The devices provide a promising pathway for high‐performance optoelectronic applications and reveal a new possibility for acoustic devices in optoelectronics. |
| first_indexed | 2024-03-08T13:18:31Z |
| format | Article |
| id | doaj.art-6ef4506652ee43798a57eed097cf4c54 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-08T13:18:31Z |
| publishDate | 2023-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-6ef4506652ee43798a57eed097cf4c542024-01-18T04:25:58ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-12-01912n/an/a10.1002/aelm.202300496Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 PhotodetectorQianru Zhao0Haoran Yan1Xudong Wang2Yan Chen3Shukui Zhang4Shuaiqin Wu5Xinning Huang6Yunxiang Di7Ke Xiong8Jinhua Zeng9Hanxue Jiao10Tie Lin11Hu He12Jun Ge13Xiangjian Meng14Hong Shen15Junhao Chu16Jianlu Wang17State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaUnit 32184 Haidian District Beijing 100089 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaState Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 ChinaAbstract 2D materials are considered as potential candidates for the next generation of optoelectronic materials. However, their optical absorption is typically weak due to thickness limitations, greatly restricting the photodetection capabilities of devices. To enhance the photoelectric gain of 2D materials or devices and improve detection sensitivity, various modulation methods such as strain, electric field, and magnetic field are commonly introduced. Among them, surface acoustic wave (SAW) represents a unique and effective modulation approach. In this study, photodetectors are fabricated based on few‐layer MoS2 on a SAW delay line on a LiTaO3 substrate. The interaction between SAW and MoS2 successfully manipulates the optoelectronic performance of the MoS2‐based devices. Under the influence of SAW, the dark current of the devices is significantly reduced by more than two orders of magnitude, while the photocurrent remains almost unchanged, resulting in excellent photoresponse performance. The devices provide a promising pathway for high‐performance optoelectronic applications and reveal a new possibility for acoustic devices in optoelectronics.https://doi.org/10.1002/aelm.2023004962D materialsdark currenthigh sensitivityphotodetectorssurface acoustic waves |
| spellingShingle | Qianru Zhao Haoran Yan Xudong Wang Yan Chen Shukui Zhang Shuaiqin Wu Xinning Huang Yunxiang Di Ke Xiong Jinhua Zeng Hanxue Jiao Tie Lin Hu He Jun Ge Xiangjian Meng Hong Shen Junhao Chu Jianlu Wang Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector Advanced Electronic Materials 2D materials dark current high sensitivity photodetectors surface acoustic waves |
| title | Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector |
| title_full | Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector |
| title_fullStr | Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector |
| title_full_unstemmed | Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector |
| title_short | Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector |
| title_sort | significant suppression of dark current in a surface acoustic wave assisted mos2 photodetector |
| topic | 2D materials dark current high sensitivity photodetectors surface acoustic waves |
| url | https://doi.org/10.1002/aelm.202300496 |
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