Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
Abstract This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. Printed electronics are a burgeoning area in electronics development, but are often stymied by the large minimum feature size. To combat this, techniques w...
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Format: | Article |
Language: | English |
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Nature Portfolio
2017-04-01
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Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-017-01391-2 |
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author | Peter Mack Grubb Harish Subbaraman Saungeun Park Deji Akinwande Ray T. Chen |
author_facet | Peter Mack Grubb Harish Subbaraman Saungeun Park Deji Akinwande Ray T. Chen |
author_sort | Peter Mack Grubb |
collection | DOAJ |
description | Abstract This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. Printed electronics are a burgeoning area in electronics development, but are often stymied by the large minimum feature size. To combat this, techniques were developed to allow for the printings of much shorter transistor channels. The small gap size is achieved through the use of silver inks with different chemical properties to prevent mixing. The combination of the short channel and semiconducting carbon nanotubes (CNT) allows for an exceptional experimentally measured on/off ratio of 106. This all inkjet printed transistor allows for the fabrication of devices using roll-to-roll methodologies with no additional overhead compared to current state of the art production methods. |
first_indexed | 2024-12-17T10:58:47Z |
format | Article |
id | doaj.art-6f1ee9cbcaf84725b18b1b0a49b65377 |
institution | Directory Open Access Journal |
issn | 2045-2322 |
language | English |
last_indexed | 2024-12-17T10:58:47Z |
publishDate | 2017-04-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Scientific Reports |
spelling | doaj.art-6f1ee9cbcaf84725b18b1b0a49b653772022-12-21T21:51:45ZengNature PortfolioScientific Reports2045-23222017-04-01711810.1038/s41598-017-01391-2Inkjet Printing of High Performance Transistors with Micron Order Chemically Set GapsPeter Mack Grubb0Harish Subbaraman1Saungeun Park2Deji Akinwande3Ray T. Chen4The University of Texas at AustinBoise State UniversityThe University of Texas at AustinThe University of Texas at AustinThe University of Texas at AustinAbstract This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. Printed electronics are a burgeoning area in electronics development, but are often stymied by the large minimum feature size. To combat this, techniques were developed to allow for the printings of much shorter transistor channels. The small gap size is achieved through the use of silver inks with different chemical properties to prevent mixing. The combination of the short channel and semiconducting carbon nanotubes (CNT) allows for an exceptional experimentally measured on/off ratio of 106. This all inkjet printed transistor allows for the fabrication of devices using roll-to-roll methodologies with no additional overhead compared to current state of the art production methods.https://doi.org/10.1038/s41598-017-01391-2 |
spellingShingle | Peter Mack Grubb Harish Subbaraman Saungeun Park Deji Akinwande Ray T. Chen Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps Scientific Reports |
title | Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps |
title_full | Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps |
title_fullStr | Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps |
title_full_unstemmed | Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps |
title_short | Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps |
title_sort | inkjet printing of high performance transistors with micron order chemically set gaps |
url | https://doi.org/10.1038/s41598-017-01391-2 |
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