Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects
Abstract Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by the introduction of additional layer in the capacit...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-03-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300509 |
| _version_ | 1797270009826770944 |
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| author | Tingfeng Song Panagiotis Koutsogiannis César Magén José A. Pardo Florencio Sánchez Ignasi Fina |
| author_facet | Tingfeng Song Panagiotis Koutsogiannis César Magén José A. Pardo Florencio Sánchez Ignasi Fina |
| author_sort | Tingfeng Song |
| collection | DOAJ |
| description | Abstract Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by the introduction of additional layer in the capacitor structure, is demonstrated as a promising strategy. However, interface layers can have multiple implications, such as changes in the chemistry of the interfaces and an increase of depolarization field, whose effects are difficult to discriminate. The role of HfO2 and ZrO2 capping is explored on polarization, retention, endurance, and leakage properties of Hf0.5Zr0.5O2 epitaxial films. In HfO2 capped films, lower polarization is observed, and endurance and retention are also comparably worse than in ZrO2 capped films. Complementary under illumination ferroelectric characterization and capacitance measurements indicate a reduction of defects and interface capacitance contribution in ZrO2 capped films. For both cappings, the interfaces with the Hf0.5Zr0.5O2 layer are shown to be compositionally sharp and the phase of Hf0.5Zr0.5O2 (HZO) grains is replicated on the capping layer, indicating that electrostatic effects prevail and that the use of interface layers with high permittivity, here ZrO2, is crucial to favor good functional properties. |
| first_indexed | 2024-04-25T01:57:27Z |
| format | Article |
| id | doaj.art-6f1f72ef72f04b57b433a5478ed16caa |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-04-25T01:57:27Z |
| publishDate | 2024-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-6f1f72ef72f04b57b433a5478ed16caa2024-03-07T15:46:04ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-03-01103n/an/a10.1002/aelm.202300509Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic EffectsTingfeng Song0Panagiotis Koutsogiannis1César Magén2José A. Pardo3Florencio Sánchez4Ignasi Fina5Institut de Ciència de Materials de Barcelona (ICMAB CSIC) Campus UAB Bellaterra Barcelona 08193 SpainInstituto de Nanociencia y Materiales de Aragón (INMA) CSIC‐Universidad de Zaragoza Zaragoza 50009 SpainInstituto de Nanociencia y Materiales de Aragón (INMA) CSIC‐Universidad de Zaragoza Zaragoza 50009 SpainInstituto de Nanociencia y Materiales de Aragón (INMA) CSIC‐Universidad de Zaragoza Zaragoza 50009 SpainInstitut de Ciència de Materials de Barcelona (ICMAB CSIC) Campus UAB Bellaterra Barcelona 08193 SpainInstitut de Ciència de Materials de Barcelona (ICMAB CSIC) Campus UAB Bellaterra Barcelona 08193 SpainAbstract Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by the introduction of additional layer in the capacitor structure, is demonstrated as a promising strategy. However, interface layers can have multiple implications, such as changes in the chemistry of the interfaces and an increase of depolarization field, whose effects are difficult to discriminate. The role of HfO2 and ZrO2 capping is explored on polarization, retention, endurance, and leakage properties of Hf0.5Zr0.5O2 epitaxial films. In HfO2 capped films, lower polarization is observed, and endurance and retention are also comparably worse than in ZrO2 capped films. Complementary under illumination ferroelectric characterization and capacitance measurements indicate a reduction of defects and interface capacitance contribution in ZrO2 capped films. For both cappings, the interfaces with the Hf0.5Zr0.5O2 layer are shown to be compositionally sharp and the phase of Hf0.5Zr0.5O2 (HZO) grains is replicated on the capping layer, indicating that electrostatic effects prevail and that the use of interface layers with high permittivity, here ZrO2, is crucial to favor good functional properties.https://doi.org/10.1002/aelm.202300509enduranceepitaxial HfO2ferroelectric hafniaHZOinterface layernanolaminates |
| spellingShingle | Tingfeng Song Panagiotis Koutsogiannis César Magén José A. Pardo Florencio Sánchez Ignasi Fina Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects Advanced Electronic Materials endurance epitaxial HfO2 ferroelectric hafnia HZO interface layer nanolaminates |
| title | Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects |
| title_full | Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects |
| title_fullStr | Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects |
| title_full_unstemmed | Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects |
| title_short | Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects |
| title_sort | improved polarization retention endurance in hf0 5zr0 5o2 films by zro2 capping via electrostatic effects |
| topic | endurance epitaxial HfO2 ferroelectric hafnia HZO interface layer nanolaminates |
| url | https://doi.org/10.1002/aelm.202300509 |
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