Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects

Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects

Abstract Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by the introduction of additional layer in the capacit...

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Bibliographic Details
Main Authors: Tingfeng Song, Panagiotis Koutsogiannis, César Magén, José A. Pardo, Florencio Sánchez, Ignasi Fina
Format: Article
Language:English
Published: Wiley-VCH 2024-03-01
Series:Advanced Electronic Materials
Subjects:
endurance
epitaxial HfO2
ferroelectric hafnia
HZO
interface layer
nanolaminates
Online Access:https://doi.org/10.1002/aelm.202300509

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