AgNbO3 antiferroelectric film with high energy storage performance
Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-11-01
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| Series: | Journal of Materiomics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847821000472 |
| _version_ | 1797764930151120896 |
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| author | Yanle Zhang Xiaobo Li Jianmin Song Suwei Zhang Jing Wang Xiuhong Dai Baoting Liu Guoyi Dong Lei Zhao |
| author_facet | Yanle Zhang Xiaobo Li Jianmin Song Suwei Zhang Jing Wang Xiuhong Dai Baoting Liu Guoyi Dong Lei Zhao |
| author_sort | Yanle Zhang |
| collection | DOAJ |
| description | Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates. However, most of the AgNbO3 based ceramics suffers from low dielectric breakdown strength (Eb). The limitation of low Eb is broken to some extent in this work. Here, AgNbO3 epitaxial films were fabricated by pulsed laser deposition, which possess high Eb of 624 kV/cm. The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm. A recoverable energy density of 5.8 J/cm3 and an energy efficiency of 55.8% are obtained at 600 kV/cm, which demonstrates the great promise of the AgNbO3 film for energy storage applications. |
| first_indexed | 2024-03-12T20:03:47Z |
| format | Article |
| id | doaj.art-6f1fb2c42d6e41919dfef784ec383b1b |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-12T20:03:47Z |
| publishDate | 2021-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj.art-6f1fb2c42d6e41919dfef784ec383b1b2023-08-02T02:15:43ZengElsevierJournal of Materiomics2352-84782021-11-017612941300AgNbO3 antiferroelectric film with high energy storage performanceYanle Zhang0Xiaobo Li1Jianmin Song2Suwei Zhang3Jing Wang4Xiuhong Dai5Baoting Liu6Guoyi Dong7Lei Zhao8Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, ChinaHebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, ChinaCollege of Science, Hebei Agricultural University, Baoding, 071001, ChinaCenter for Advanced Measurement Science, National Institute of Metrology, Beijing, 100029, ChinaState Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, ChinaHebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, ChinaHebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, ChinaHebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China; Corresponding author.Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China; Corresponding author.Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates. However, most of the AgNbO3 based ceramics suffers from low dielectric breakdown strength (Eb). The limitation of low Eb is broken to some extent in this work. Here, AgNbO3 epitaxial films were fabricated by pulsed laser deposition, which possess high Eb of 624 kV/cm. The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm. A recoverable energy density of 5.8 J/cm3 and an energy efficiency of 55.8% are obtained at 600 kV/cm, which demonstrates the great promise of the AgNbO3 film for energy storage applications.http://www.sciencedirect.com/science/article/pii/S2352847821000472AgNbO3AntiferroelectricFilmEnergy storage performance |
| spellingShingle | Yanle Zhang Xiaobo Li Jianmin Song Suwei Zhang Jing Wang Xiuhong Dai Baoting Liu Guoyi Dong Lei Zhao AgNbO3 antiferroelectric film with high energy storage performance Journal of Materiomics AgNbO3 Antiferroelectric Film Energy storage performance |
| title | AgNbO3 antiferroelectric film with high energy storage performance |
| title_full | AgNbO3 antiferroelectric film with high energy storage performance |
| title_fullStr | AgNbO3 antiferroelectric film with high energy storage performance |
| title_full_unstemmed | AgNbO3 antiferroelectric film with high energy storage performance |
| title_short | AgNbO3 antiferroelectric film with high energy storage performance |
| title_sort | agnbo3 antiferroelectric film with high energy storage performance |
| topic | AgNbO3 Antiferroelectric Film Energy storage performance |
| url | http://www.sciencedirect.com/science/article/pii/S2352847821000472 |
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