Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespec...
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2018-09-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.9.239 |
| _version_ | 1818760481421131776 |
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| author | Dapeng Wang Mamoru Furuta |
| author_facet | Dapeng Wang Mamoru Furuta |
| author_sort | Dapeng Wang |
| collection | DOAJ |
| description | The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the TIGZO when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the TIGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping VGS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the TIGZO was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS. |
| first_indexed | 2024-12-18T06:59:18Z |
| format | Article |
| id | doaj.art-6f2443ca355c4ebd9e8b0c1ae7d56f1d |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-18T06:59:18Z |
| publishDate | 2018-09-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-6f2443ca355c4ebd9e8b0c1ae7d56f1d2022-12-21T21:17:06ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-09-01912573258010.3762/bjnano.9.2392190-4286-9-239Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknessesDapeng Wang0Mamoru Furuta1Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, ChinaSchool of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanThe photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the TIGZO when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the TIGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping VGS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the TIGZO was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS.https://doi.org/10.3762/bjnano.9.239active layer thicknessgate biasillumination stressInGaZnOphotoleakage currentthin-film transistors |
| spellingShingle | Dapeng Wang Mamoru Furuta Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses Beilstein Journal of Nanotechnology active layer thickness gate bias illumination stress InGaZnO photoleakage current thin-film transistors |
| title | Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses |
| title_full | Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses |
| title_fullStr | Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses |
| title_full_unstemmed | Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses |
| title_short | Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses |
| title_sort | exploring the photoleakage current and photoinduced negative bias instability in amorphous ingazno thin film transistors with various active layer thicknesses |
| topic | active layer thickness gate bias illumination stress InGaZnO photoleakage current thin-film transistors |
| url | https://doi.org/10.3762/bjnano.9.239 |
| work_keys_str_mv | AT dapengwang exploringthephotoleakagecurrentandphotoinducednegativebiasinstabilityinamorphousingaznothinfilmtransistorswithvariousactivelayerthicknesses AT mamorufuruta exploringthephotoleakagecurrentandphotoinducednegativebiasinstabilityinamorphousingaznothinfilmtransistorswithvariousactivelayerthicknesses |