Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespec...

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Bibliographic Details
Main Authors: Dapeng Wang, Mamoru Furuta
Format: Article
Language:English
Published: Beilstein-Institut 2018-09-01
Series:Beilstein Journal of Nanotechnology
Subjects:
active layer thickness
gate bias
illumination stress
InGaZnO
photoleakage current
thin-film transistors
Online Access:https://doi.org/10.3762/bjnano.9.239

Internet

https://doi.org/10.3762/bjnano.9.239

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