Improved Optoelectronic Characteristics of Ga-In co-Doped ZnO UV Photodetectors by Asymmetric Metal Contact Structure
Transparent Ga and In co-doped ZnO (ZnO:Ga-In) semiconductor thin films were deposited on Corning glass substrates by the sol-gel spin-coating process. The ZnO:Ga-In thin films were used as the sensing layer of metal–semiconductor–metal (MSM)-type ultraviolet (UV) photodetectors (PDs). In this study...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-05-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/5/746 |