Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8
Abstract The anomalous Hall effect (AHE) that associated with the Berry curvature of occupied electronic states in momentum‐space is one of the intriguing aspects in condensed matter physics, and provides an alternative for potential applications in topological electronics. Previous experiments repo...
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-03-01
|
| Series: | InfoMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/inf2.12524 |
| _version_ | 1797244984770953216 |
|---|---|
| author | Kui Meng Zeya Li Zhansheng Gao Xiangyu Bi Peng Chen Feng Qin Caiyu Qiu Lingyun Xu Junwei Huang Jinxiong Wu Feng Luo Hongtao Yuan |
| author_facet | Kui Meng Zeya Li Zhansheng Gao Xiangyu Bi Peng Chen Feng Qin Caiyu Qiu Lingyun Xu Junwei Huang Jinxiong Wu Feng Luo Hongtao Yuan |
| author_sort | Kui Meng |
| collection | DOAJ |
| description | Abstract The anomalous Hall effect (AHE) that associated with the Berry curvature of occupied electronic states in momentum‐space is one of the intriguing aspects in condensed matter physics, and provides an alternative for potential applications in topological electronics. Previous experiments reported the tunable Berry curvature and the resulting magnetization switching process in the AHE based on strain engineering or chemical doping. However, the AHE modulation by these strategies are usually irreversible, making it difficult to realize switchable control of the AHE and the resultant spintronic applications. Here, we demonstrated the switchable control of the Berry‐curvature‐related AHE by electrical gating in itinerant ferromagnetic Cr7Te8 with excellent ambient stability. The gate‐tunable sign reversal of the AHE can be attributed to the redistribution of the Berry curvature in the band structure of Cr7Te8 due to the intercalation‐induced change in the Fermi level. Our work facilitates the applications of magnetic switchable devices based on gate‐tunable Berry curvature. |
| first_indexed | 2024-04-24T19:19:42Z |
| format | Article |
| id | doaj.art-6f42b97123914c07978352696ca961dc |
| institution | Directory Open Access Journal |
| issn | 2567-3165 |
| language | English |
| last_indexed | 2024-04-24T19:19:42Z |
| publishDate | 2024-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | InfoMat |
| spelling | doaj.art-6f42b97123914c07978352696ca961dc2024-03-26T01:27:19ZengWileyInfoMat2567-31652024-03-0163n/an/a10.1002/inf2.12524Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8Kui Meng0Zeya Li1Zhansheng Gao2Xiangyu Bi3Peng Chen4Feng Qin5Caiyu Qiu6Lingyun Xu7Junwei Huang8Jinxiong Wu9Feng Luo10Hongtao Yuan11National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaCenter for the Physics of Low‐Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics Henan University Kaifeng the People's Republic of ChinaNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering Nankai University Tianjin the People's Republic of ChinaNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering Nankai University Tianjin the People's Republic of ChinaTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering Nankai University Tianjin the People's Republic of ChinaNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of ChinaAbstract The anomalous Hall effect (AHE) that associated with the Berry curvature of occupied electronic states in momentum‐space is one of the intriguing aspects in condensed matter physics, and provides an alternative for potential applications in topological electronics. Previous experiments reported the tunable Berry curvature and the resulting magnetization switching process in the AHE based on strain engineering or chemical doping. However, the AHE modulation by these strategies are usually irreversible, making it difficult to realize switchable control of the AHE and the resultant spintronic applications. Here, we demonstrated the switchable control of the Berry‐curvature‐related AHE by electrical gating in itinerant ferromagnetic Cr7Te8 with excellent ambient stability. The gate‐tunable sign reversal of the AHE can be attributed to the redistribution of the Berry curvature in the band structure of Cr7Te8 due to the intercalation‐induced change in the Fermi level. Our work facilitates the applications of magnetic switchable devices based on gate‐tunable Berry curvature.https://doi.org/10.1002/inf2.12524anomalous Hall effectBerry curvaturevan der Waals itinerant ferromagnetism |
| spellingShingle | Kui Meng Zeya Li Zhansheng Gao Xiangyu Bi Peng Chen Feng Qin Caiyu Qiu Lingyun Xu Junwei Huang Jinxiong Wu Feng Luo Hongtao Yuan Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8 InfoMat anomalous Hall effect Berry curvature van der Waals itinerant ferromagnetism |
| title | Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8 |
| title_full | Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8 |
| title_fullStr | Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8 |
| title_full_unstemmed | Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8 |
| title_short | Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8 |
| title_sort | gate tunable berry curvature in van der waals itinerant ferromagnetic cr7te8 |
| topic | anomalous Hall effect Berry curvature van der Waals itinerant ferromagnetism |
| url | https://doi.org/10.1002/inf2.12524 |
| work_keys_str_mv | AT kuimeng gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT zeyali gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT zhanshenggao gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT xiangyubi gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT pengchen gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT fengqin gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT caiyuqiu gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT lingyunxu gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT junweihuang gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT jinxiongwu gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT fengluo gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 AT hongtaoyuan gatetunableberrycurvatureinvanderwaalsitinerantferromagneticcr7te8 |