Development of Micron Sized Photonic Devices Based on Deep GaN Etching
In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate performances. In our reported research activity, dry e...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-03-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/8/3/68 |
| _version_ | 1797415838018437120 |
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| author | Karim Dogheche Bandar Alshehri Galles Patriache Elhadj Dogheche |
| author_facet | Karim Dogheche Bandar Alshehri Galles Patriache Elhadj Dogheche |
| author_sort | Karim Dogheche |
| collection | DOAJ |
| description | In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate performances. In our reported research activity, dry etching of an InGaN/GaN heterogeneous structure was investigated by using an inductively coupled plasma reactive ion etching (ICP-RIE). We considered different combinations of etch mask (Ni, SiO<sub>2</sub>, resist), focussing on the optimization of the deep etching process. A GaN mesa process with an etching depth up to 6 µm was performed in Cl<sub>2</sub>/Ar-based plasmas using ICP reactors for LEDs dimen sions ranging from 5 to 150 µm². Our strategy was directed toward the mesa formation for vertical-type diode applications, where etch depths are relatively large. Etch characteristics were studied as a function of ICP parameters (RF power, chamber pressure, fixed total flow rate). Surface morphology, etch rates and sidewall profiles observed into InGaN/GaN structures were compared under different types of etching masks. For deep etching up to few microns into the GaN template, we state that a Ni or SiO<sub>2</sub> mask is more suitable to obtain a good selectivity and vertical etch profiles. The optimized etch rate was about 200nm/min under moderate ICP conditions. We applied these conditions for the fabrication of micro/nano LEDs dedicated to LiFi applications. |
| first_indexed | 2024-03-09T05:55:20Z |
| format | Article |
| id | doaj.art-6f4450944d4c425b848f300445022479 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T05:55:20Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-6f4450944d4c425b848f3004450224792023-12-03T12:13:53ZengMDPI AGPhotonics2304-67322021-03-01836810.3390/photonics8030068Development of Micron Sized Photonic Devices Based on Deep GaN EtchingKarim Dogheche0Bandar Alshehri1Galles Patriache2Elhadj Dogheche3Institute of Electronics, Université Polytechnique Hauts de France, Microelectronics & Nanotechnology IEMN CNRS UMR 8520, 59313 Valenciennes, FranceTMO Transformation Management Office, Riyad 11564, Saudi ArabiaCentre for Nanoscience and Nanotechnology (C2N), CNRS, UMR 9001, 91460 Marcoussis, FranceInstitute of Electronics, Université Polytechnique Hauts de France, Microelectronics & Nanotechnology IEMN CNRS UMR 8520, 59313 Valenciennes, FranceIn order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate performances. In our reported research activity, dry etching of an InGaN/GaN heterogeneous structure was investigated by using an inductively coupled plasma reactive ion etching (ICP-RIE). We considered different combinations of etch mask (Ni, SiO<sub>2</sub>, resist), focussing on the optimization of the deep etching process. A GaN mesa process with an etching depth up to 6 µm was performed in Cl<sub>2</sub>/Ar-based plasmas using ICP reactors for LEDs dimen sions ranging from 5 to 150 µm². Our strategy was directed toward the mesa formation for vertical-type diode applications, where etch depths are relatively large. Etch characteristics were studied as a function of ICP parameters (RF power, chamber pressure, fixed total flow rate). Surface morphology, etch rates and sidewall profiles observed into InGaN/GaN structures were compared under different types of etching masks. For deep etching up to few microns into the GaN template, we state that a Ni or SiO<sub>2</sub> mask is more suitable to obtain a good selectivity and vertical etch profiles. The optimized etch rate was about 200nm/min under moderate ICP conditions. We applied these conditions for the fabrication of micro/nano LEDs dedicated to LiFi applications.https://www.mdpi.com/2304-6732/8/3/68InGaN/GaNICPdeep etchingmesaphotonic devices |
| spellingShingle | Karim Dogheche Bandar Alshehri Galles Patriache Elhadj Dogheche Development of Micron Sized Photonic Devices Based on Deep GaN Etching Photonics InGaN/GaN ICP deep etching mesa photonic devices |
| title | Development of Micron Sized Photonic Devices Based on Deep GaN Etching |
| title_full | Development of Micron Sized Photonic Devices Based on Deep GaN Etching |
| title_fullStr | Development of Micron Sized Photonic Devices Based on Deep GaN Etching |
| title_full_unstemmed | Development of Micron Sized Photonic Devices Based on Deep GaN Etching |
| title_short | Development of Micron Sized Photonic Devices Based on Deep GaN Etching |
| title_sort | development of micron sized photonic devices based on deep gan etching |
| topic | InGaN/GaN ICP deep etching mesa photonic devices |
| url | https://www.mdpi.com/2304-6732/8/3/68 |
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