Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes
In this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias...
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MDPI AG
2024-03-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/13/6/1086 |
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| author | Mingzhu Xun Yudong Li Mingyu Liu |
| author_facet | Mingzhu Xun Yudong Li Mingyu Liu |
| author_sort | Mingzhu Xun |
| collection | DOAJ |
| description | In this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias conditions. Comparison experiments of proton and gamma irradiation were performed in the radiation environment of geosynchronous transfer orbit (GTO) with two different radiation shielding designs at the same total ionizing dose (TID). The results show that after 30 MeV and 60 MeV proton irradiation, the leakage current and gain increase, while the spectral response decreases slightly. The leakage current degradation is more severe under the “ON”-bias condition compared to the “OFF”-bias condition, and it is more sensitive to the displacement radiation damage caused by protons compared to gamma rays under the same TID. Further analysis reveals that the non-elastic and elastic cross-section of protons in silicon is 1.05 × 10<sup>5</sup> times greater than that of gamma rays. This results in SPAD devices being more sensitive to displacement radiation damage than ionizing radiation damage. Under the designed shielding conditions, the leakage current, gain and spectral response parameters of SPADs do not show significant performance degradation in the orbit. |
| first_indexed | 2024-04-24T18:21:18Z |
| format | Article |
| id | doaj.art-6f70620bdf514ab2aba3e1ab7ec15d6b |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-24T18:21:18Z |
| publishDate | 2024-03-01 |
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| series | Electronics |
| spelling | doaj.art-6f70620bdf514ab2aba3e1ab7ec15d6b2024-03-27T13:34:56ZengMDPI AGElectronics2079-92922024-03-01136108610.3390/electronics13061086Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche DiodesMingzhu Xun0Yudong Li1Mingyu Liu2State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, ChinaState Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, ChinaState Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, ChinaIn this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias conditions. Comparison experiments of proton and gamma irradiation were performed in the radiation environment of geosynchronous transfer orbit (GTO) with two different radiation shielding designs at the same total ionizing dose (TID). The results show that after 30 MeV and 60 MeV proton irradiation, the leakage current and gain increase, while the spectral response decreases slightly. The leakage current degradation is more severe under the “ON”-bias condition compared to the “OFF”-bias condition, and it is more sensitive to the displacement radiation damage caused by protons compared to gamma rays under the same TID. Further analysis reveals that the non-elastic and elastic cross-section of protons in silicon is 1.05 × 10<sup>5</sup> times greater than that of gamma rays. This results in SPAD devices being more sensitive to displacement radiation damage than ionizing radiation damage. Under the designed shielding conditions, the leakage current, gain and spectral response parameters of SPADs do not show significant performance degradation in the orbit.https://www.mdpi.com/2079-9292/13/6/1086SPADsproton irradiationgamma irradiationI–V characteristics |
| spellingShingle | Mingzhu Xun Yudong Li Mingyu Liu Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes Electronics SPADs proton irradiation gamma irradiation I–V characteristics |
| title | Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes |
| title_full | Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes |
| title_fullStr | Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes |
| title_full_unstemmed | Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes |
| title_short | Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes |
| title_sort | comparison of proton and gamma irradiation on single photon avalanche diodes |
| topic | SPADs proton irradiation gamma irradiation I–V characteristics |
| url | https://www.mdpi.com/2079-9292/13/6/1086 |
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