Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range o...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2023-03-01
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| Series: | Âderna Fìzika ta Energetika |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/24.1/Articles_PDF/jnpae-2023-24-0027-Mosiuk.pdf |
| _version_ | 1827960446395613184 |
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| author | T. I. Mosiuk R. M. Vernydub P. G. Lytovchenko Yu. B. Myroshnichenko D. P. Stratilat V. P. Tartachnyk V. V. Shlapatska |
| author_facet | T. I. Mosiuk R. M. Vernydub P. G. Lytovchenko Yu. B. Myroshnichenko D. P. Stratilat V. P. Tartachnyk V. V. Shlapatska |
| author_sort | T. I. Mosiuk |
| collection | DOAJ |
| description | We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed. |
| first_indexed | 2024-04-09T16:09:51Z |
| format | Article |
| id | doaj.art-6f7b5bf02a074439a7db46bfc562b358 |
| institution | Directory Open Access Journal |
| issn | 1818-331X 2074-0565 |
| language | English |
| last_indexed | 2024-04-09T16:09:51Z |
| publishDate | 2023-03-01 |
| publisher | Institute for Nuclear Research, National Academy of Sciences of Ukraine |
| record_format | Article |
| series | Âderna Fìzika ta Energetika |
| spelling | doaj.art-6f7b5bf02a074439a7db46bfc562b3582023-04-24T14:12:39ZengInstitute for Nuclear Research, National Academy of Sciences of UkraineÂderna Fìzika ta Energetika1818-331X2074-05652023-03-012412733https://doi.org/10.15407/jnpae2023.01.027Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDsT. I. Mosiuk0R. M. Vernydub1P. G. Lytovchenko2Yu. B. Myroshnichenko3D. P. Stratilat4V. P. Tartachnyk5V. V. Shlapatska6National Pedagogical Dragoмаnov University, Kyiv, UkraineNational Pedagogical Dragoмаnov University, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineNational Pedagogical Dragoмаnov University, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineL. V. Pisarzhevski Physical Chemistry Institute, National Academy of Sciences of Ukraine, Kyiv, UkraineWe studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.http://jnpae.kinr.kiev.ua/24.1/Articles_PDF/jnpae-2023-24-0027-Mosiuk.pdfinganlight emitting diodenegative differential resistancecurrent-voltage characteristicselectroluminescence characteristics. |
| spellingShingle | T. I. Mosiuk R. M. Vernydub P. G. Lytovchenko Yu. B. Myroshnichenko D. P. Stratilat V. P. Tartachnyk V. V. Shlapatska Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs Âderna Fìzika ta Energetika ingan light emitting diode negative differential resistance current-voltage characteristics electroluminescence characteristics. |
| title | Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs |
| title_full | Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs |
| title_fullStr | Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs |
| title_full_unstemmed | Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs |
| title_short | Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs |
| title_sort | influence of electron irradiation with e 2 mev on electrophysical and optical characteristics of green ingan gan leds |
| topic | ingan light emitting diode negative differential resistance current-voltage characteristics electroluminescence characteristics. |
| url | http://jnpae.kinr.kiev.ua/24.1/Articles_PDF/jnpae-2023-24-0027-Mosiuk.pdf |
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