Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3
Abstract The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi0.5Sb1.5Te3 is a p‐type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022-05-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202105709 |
| _version_ | 1818202603442405376 |
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| author | Feng‐Xian Bai Hao Yu Ya‐Kang Peng Shan Li Li Yin Ge Huang Liu‐Cheng Chen Alexander F. Goncharov Jie‐He Sui Feng Cao Jun Mao Qian Zhang Xiao‐Jia Chen |
| author_facet | Feng‐Xian Bai Hao Yu Ya‐Kang Peng Shan Li Li Yin Ge Huang Liu‐Cheng Chen Alexander F. Goncharov Jie‐He Sui Feng Cao Jun Mao Qian Zhang Xiao‐Jia Chen |
| author_sort | Feng‐Xian Bai |
| collection | DOAJ |
| description | Abstract The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi0.5Sb1.5Te3 is a p‐type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined whether the figure of merit of this model system can be further enhanced through some external parameter. With the application of pressure, it is surprisingly found that the power factor of this material exhibits λ behavior with a high value of 4.8 mW m−1 K−2 at pressure of 1.8 GPa. Such an enhancement is found to be driven by pressure‐induced electronic topological transition, which is revealed by multiple techniques. Together with a low thermal conductivity of about 0.89 W m−1 K−1 at the same pressure, a figure of merit of 1.6 is achieved at room temperature. The results and findings highlight the electronic topological transition as a new route for improving the thermoelectric properties. |
| first_indexed | 2024-12-12T03:12:04Z |
| format | Article |
| id | doaj.art-6f95847e59444568a1a8e6f42690575d |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-12T03:12:04Z |
| publishDate | 2022-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-6f95847e59444568a1a8e6f42690575d2022-12-22T00:40:23ZengWileyAdvanced Science2198-38442022-05-01914n/an/a10.1002/advs.202105709Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3Feng‐Xian Bai0Hao Yu1Ya‐Kang Peng2Shan Li3Li Yin4Ge Huang5Liu‐Cheng Chen6Alexander F. Goncharov7Jie‐He Sui8Feng Cao9Jun Mao10Qian Zhang11Xiao‐Jia Chen12School of Materials Science and Engineering and Institute of Materials Genome & Big Data Harbin Institute of Technology Shenzhen 518055 ChinaCenter for High Pressure Science and Technology Advanced Research Shanghai 201203 ChinaCenter for High Pressure Science and Technology Advanced Research Shanghai 201203 ChinaSchool of Materials Science and Engineering and Institute of Materials Genome & Big Data Harbin Institute of Technology Shenzhen 518055 ChinaSchool of Materials Science and Engineering and Institute of Materials Genome & Big Data Harbin Institute of Technology Shenzhen 518055 ChinaCenter for High Pressure Science and Technology Advanced Research Shanghai 201203 ChinaCenter for High Pressure Science and Technology Advanced Research Shanghai 201203 ChinaEarth and Planets Laboratory Carnegie Institution for Science Washington D.C. 20015 USAState Key Laboratory of Advanced Welding and Joining Harbin Institute of Technology Harbin 150001 ChinaSchool of Science Harbin Institute of Technology Shenzhen 518055 ChinaSchool of Materials Science and Engineering and Institute of Materials Genome & Big Data Harbin Institute of Technology Shenzhen 518055 ChinaSchool of Materials Science and Engineering and Institute of Materials Genome & Big Data Harbin Institute of Technology Shenzhen 518055 ChinaCenter for High Pressure Science and Technology Advanced Research Shanghai 201203 ChinaAbstract The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi0.5Sb1.5Te3 is a p‐type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined whether the figure of merit of this model system can be further enhanced through some external parameter. With the application of pressure, it is surprisingly found that the power factor of this material exhibits λ behavior with a high value of 4.8 mW m−1 K−2 at pressure of 1.8 GPa. Such an enhancement is found to be driven by pressure‐induced electronic topological transition, which is revealed by multiple techniques. Together with a low thermal conductivity of about 0.89 W m−1 K−1 at the same pressure, a figure of merit of 1.6 is achieved at room temperature. The results and findings highlight the electronic topological transition as a new route for improving the thermoelectric properties.https://doi.org/10.1002/advs.202105709Bi0.5Sb1.5Te3electronic topological transitionpressurethermoelectric materials |
| spellingShingle | Feng‐Xian Bai Hao Yu Ya‐Kang Peng Shan Li Li Yin Ge Huang Liu‐Cheng Chen Alexander F. Goncharov Jie‐He Sui Feng Cao Jun Mao Qian Zhang Xiao‐Jia Chen Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3 Advanced Science Bi0.5Sb1.5Te3 electronic topological transition pressure thermoelectric materials |
| title | Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3 |
| title_full | Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3 |
| title_fullStr | Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3 |
| title_full_unstemmed | Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3 |
| title_short | Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi0.5Sb1.5Te3 |
| title_sort | electronic topological transition as a route to improve thermoelectric performance in bi0 5sb1 5te3 |
| topic | Bi0.5Sb1.5Te3 electronic topological transition pressure thermoelectric materials |
| url | https://doi.org/10.1002/advs.202105709 |
| work_keys_str_mv | AT fengxianbai electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT haoyu electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT yakangpeng electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT shanli electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT liyin electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT gehuang electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT liuchengchen electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT alexanderfgoncharov electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT jiehesui electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT fengcao electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT junmao electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT qianzhang electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 AT xiaojiachen electronictopologicaltransitionasaroutetoimprovethermoelectricperformanceinbi05sb15te3 |