Enhancing performance of polar InGaN-based thin film solar cells through intrinsic layer impact optimization: Numerical modeling
The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombinatio...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2024-03-01
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Series: | Results in Engineering |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123024001622 |