Enhancing performance of polar InGaN-based thin film solar cells through intrinsic layer impact optimization: Numerical modeling

Enhancing performance of polar InGaN-based thin film solar cells through intrinsic layer impact optimization: Numerical modeling

The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombinatio...

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Bibliographic Details
Main Authors: Haddou El Ghazi, Yasin Ramazan Eker, Redouane En-nadir, Shrouk E. Zaki, Mohamed A. Basyooni-M. Kabatas
Format: Article
Language:English
Published: Elsevier 2024-03-01
Series:Results in Engineering
Subjects:
Photovoltaic
(In, Ga)N
PIN
Solar cell
Performance
Intrinsic layer
Online Access:http://www.sciencedirect.com/science/article/pii/S2590123024001622

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