Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS<sub>2</sub> Memristive Devices
Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS<sub>2</sub> FETs. The dominant sources of hysteresis reported i...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2024-03-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/17/6/1350 |