Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS<sub>2</sub> Memristive Devices

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS<sub>2</sub> Memristive Devices

Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS<sub>2</sub> FETs. The dominant sources of hysteresis reported i...

Full description

Bibliographic Details
Main Authors: Saadman Abedin, Vladislav Kurtash, Sobin Mathew, Sebastian Thiele, Heiko O. Jacobs, Jörg Pezoldt
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Materials
Subjects:
semiconductor memory devices
memristors
neuromorphic computing systems
charge-trapping devices
molybdenum disulfide
Online Access:https://www.mdpi.com/1996-1944/17/6/1350

Similar Items

Similar Items