Flexible kesterite thin-film solar cells under stress
Abstract Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices under mechanical...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-11-01
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| Series: | npj Flexible Electronics |
| Online Access: | https://doi.org/10.1038/s41528-022-00221-4 |
| _version_ | 1811328592700768256 |
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| author | Ha Kyung Park Yunae Cho Juran Kim Sammi Kim Sungjun Kim Jeha Kim Kee-Jeong Yang Dae-Hwan Kim Jin-Kyu Kang William Jo |
| author_facet | Ha Kyung Park Yunae Cho Juran Kim Sammi Kim Sungjun Kim Jeha Kim Kee-Jeong Yang Dae-Hwan Kim Jin-Kyu Kang William Jo |
| author_sort | Ha Kyung Park |
| collection | DOAJ |
| description | Abstract Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation. The electronic structure of CZTSSe was deformed with stress as the band gap, valence band edge, and work function changed. Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na. The local open-circuit voltage (V OC) on the bent CZTSSe surface decreased due to limited carrier excitation. The reduction of local V OC occurred larger with convex bending than in concave bending, which is consistent with the degradation of device parameters. This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices. |
| first_indexed | 2024-04-13T15:28:47Z |
| format | Article |
| id | doaj.art-6fec6811344d4eedb44d346e061da78e |
| institution | Directory Open Access Journal |
| issn | 2397-4621 |
| language | English |
| last_indexed | 2024-04-13T15:28:47Z |
| publishDate | 2022-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Flexible Electronics |
| spelling | doaj.art-6fec6811344d4eedb44d346e061da78e2022-12-22T02:41:26ZengNature Portfolionpj Flexible Electronics2397-46212022-11-01611810.1038/s41528-022-00221-4Flexible kesterite thin-film solar cells under stressHa Kyung Park0Yunae Cho1Juran Kim2Sammi Kim3Sungjun Kim4Jeha Kim5Kee-Jeong Yang6Dae-Hwan Kim7Jin-Kyu Kang8William Jo9Department of Physics, Ewha Womans UniversityDepartment of Physics, Ewha Womans UniversityDepartment of Physics, Ewha Womans UniversityDivision of Energy Technology, Daegu Gyeongbuk Institute of Science and Technology (DGIST)Department of Solar & Energy Engineering, Cheongju UniversityDepartment of Solar & Energy Engineering, Cheongju UniversityDivision of Energy Technology, Daegu Gyeongbuk Institute of Science and Technology (DGIST)Division of Energy Technology, Daegu Gyeongbuk Institute of Science and Technology (DGIST)Division of Energy Technology, Daegu Gyeongbuk Institute of Science and Technology (DGIST)Department of Physics, Ewha Womans UniversityAbstract Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation. The electronic structure of CZTSSe was deformed with stress as the band gap, valence band edge, and work function changed. Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na. The local open-circuit voltage (V OC) on the bent CZTSSe surface decreased due to limited carrier excitation. The reduction of local V OC occurred larger with convex bending than in concave bending, which is consistent with the degradation of device parameters. This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.https://doi.org/10.1038/s41528-022-00221-4 |
| spellingShingle | Ha Kyung Park Yunae Cho Juran Kim Sammi Kim Sungjun Kim Jeha Kim Kee-Jeong Yang Dae-Hwan Kim Jin-Kyu Kang William Jo Flexible kesterite thin-film solar cells under stress npj Flexible Electronics |
| title | Flexible kesterite thin-film solar cells under stress |
| title_full | Flexible kesterite thin-film solar cells under stress |
| title_fullStr | Flexible kesterite thin-film solar cells under stress |
| title_full_unstemmed | Flexible kesterite thin-film solar cells under stress |
| title_short | Flexible kesterite thin-film solar cells under stress |
| title_sort | flexible kesterite thin film solar cells under stress |
| url | https://doi.org/10.1038/s41528-022-00221-4 |
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