X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Žilina
2003-06-01
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| Series: | Communications |
| Subjects: | |
| Online Access: | https://komunikacie.uniza.sk/artkey/csl-200302-0008_x-ray-diffraction-line-profile-analysis-of-strongly-textured-thin-films-of-zno.php |
| Summary: | ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis orientation and microstrain of crystallites was also studied. The microstrains and domain size showed only a small dependence on the preference of a buffer layer, but they depend on the thickness of ZnO thin film. The stress gradient along the c-axis was observed in all of studied samples. |
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| ISSN: | 1335-4205 2585-7878 |