X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis...
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Format: | Article |
Language: | English |
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University of Žilina
2003-06-01
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Series: | Communications |
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Online Access: | https://komunikacie.uniza.sk/artkey/csl-200302-0008_x-ray-diffraction-line-profile-analysis-of-strongly-textured-thin-films-of-zno.php |
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author | P. Sutta Q. Jackuliak |
author_facet | P. Sutta Q. Jackuliak |
author_sort | P. Sutta |
collection | DOAJ |
description | ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis orientation and microstrain of crystallites was also studied. The microstrains and domain size showed only a small dependence on the preference of a buffer layer, but they depend on the thickness of ZnO thin film. The stress gradient along the c-axis was observed in all of studied samples. |
first_indexed | 2024-04-09T18:05:38Z |
format | Article |
id | doaj.art-6ffafdea21de4c09ba113cf1583371c7 |
institution | Directory Open Access Journal |
issn | 1335-4205 2585-7878 |
language | English |
last_indexed | 2024-04-09T18:05:38Z |
publishDate | 2003-06-01 |
publisher | University of Žilina |
record_format | Article |
series | Communications |
spelling | doaj.art-6ffafdea21de4c09ba113cf1583371c72023-04-14T06:29:27ZengUniversity of ŽilinaCommunications1335-42052585-78782003-06-0152374010.26552/com.C.2003.2.37-40csl-200302-0008X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnOP. Sutta0Q. Jackuliak1Department of Physics, Faculty of Logistics, Military Academy, Liptovsky Mikulas, SlovakiaDepartment of Technical Physics, Faculty of Electrical Engineering, University of Zilina, SlovakiaZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis orientation and microstrain of crystallites was also studied. The microstrains and domain size showed only a small dependence on the preference of a buffer layer, but they depend on the thickness of ZnO thin film. The stress gradient along the c-axis was observed in all of studied samples.https://komunikacie.uniza.sk/artkey/csl-200302-0008_x-ray-diffraction-line-profile-analysis-of-strongly-textured-thin-films-of-zno.phpno keywords |
spellingShingle | P. Sutta Q. Jackuliak X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO Communications no keywords |
title | X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO |
title_full | X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO |
title_fullStr | X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO |
title_full_unstemmed | X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO |
title_short | X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO |
title_sort | x ray diffraction line profile analysis of strongly textured thin films of zno |
topic | no keywords |
url | https://komunikacie.uniza.sk/artkey/csl-200302-0008_x-ray-diffraction-line-profile-analysis-of-strongly-textured-thin-films-of-zno.php |
work_keys_str_mv | AT psutta xraydiffractionlineprofileanalysisofstronglytexturedthinfilmsofzno AT qjackuliak xraydiffractionlineprofileanalysisofstronglytexturedthinfilmsofzno |