X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO

ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis...

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Main Authors: P. Sutta, Q. Jackuliak
Format: Article
Language:English
Published: University of Žilina 2003-06-01
Series:Communications
Subjects:
Online Access:https://komunikacie.uniza.sk/artkey/csl-200302-0008_x-ray-diffraction-line-profile-analysis-of-strongly-textured-thin-films-of-zno.php
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author P. Sutta
Q. Jackuliak
author_facet P. Sutta
Q. Jackuliak
author_sort P. Sutta
collection DOAJ
description ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis orientation and microstrain of crystallites was also studied. The microstrains and domain size showed only a small dependence on the preference of a buffer layer, but they depend on the thickness of ZnO thin film. The stress gradient along the c-axis was observed in all of studied samples.
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spelling doaj.art-6ffafdea21de4c09ba113cf1583371c72023-04-14T06:29:27ZengUniversity of ŽilinaCommunications1335-42052585-78782003-06-0152374010.26552/com.C.2003.2.37-40csl-200302-0008X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnOP. Sutta0Q. Jackuliak1Department of Physics, Faculty of Logistics, Military Academy, Liptovsky Mikulas, SlovakiaDepartment of Technical Physics, Faculty of Electrical Engineering, University of Zilina, SlovakiaZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis orientation and microstrain of crystallites was also studied. The microstrains and domain size showed only a small dependence on the preference of a buffer layer, but they depend on the thickness of ZnO thin film. The stress gradient along the c-axis was observed in all of studied samples.https://komunikacie.uniza.sk/artkey/csl-200302-0008_x-ray-diffraction-line-profile-analysis-of-strongly-textured-thin-films-of-zno.phpno keywords
spellingShingle P. Sutta
Q. Jackuliak
X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
Communications
no keywords
title X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
title_full X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
title_fullStr X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
title_full_unstemmed X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
title_short X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO
title_sort x ray diffraction line profile analysis of strongly textured thin films of zno
topic no keywords
url https://komunikacie.uniza.sk/artkey/csl-200302-0008_x-ray-diffraction-line-profile-analysis-of-strongly-textured-thin-films-of-zno.php
work_keys_str_mv AT psutta xraydiffractionlineprofileanalysisofstronglytexturedthinfilmsofzno
AT qjackuliak xraydiffractionlineprofileanalysisofstronglytexturedthinfilmsofzno