A type-II MnPSe3/GeC heterostructure with tunable spin and valley splitting

The ternary chalcogenide MnPSe3 monolayer recently gets a lot of attention because of its two nonequivalent energy valleys. The existence of spin–orbit coupling (SOC) effect can cause the valley splitting of around 24 meV. However, the spin degeneracy is still kept in MnPSe3 monolayer owing to the a...

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Main Authors: Tongwei Li, Jing Chen, Kai Tian, Xin Jiang, Xinyao Wu, Haisheng Li, Weiwei Ju
Format: Article
Language:English
Published: Elsevier 2023-05-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379723002486
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author Tongwei Li
Jing Chen
Kai Tian
Xin Jiang
Xinyao Wu
Haisheng Li
Weiwei Ju
author_facet Tongwei Li
Jing Chen
Kai Tian
Xin Jiang
Xinyao Wu
Haisheng Li
Weiwei Ju
author_sort Tongwei Li
collection DOAJ
description The ternary chalcogenide MnPSe3 monolayer recently gets a lot of attention because of its two nonequivalent energy valleys. The existence of spin–orbit coupling (SOC) effect can cause the valley splitting of around 24 meV. However, the spin degeneracy is still kept in MnPSe3 monolayer owing to the antiferromagnetic coupling between Mn2+ ions. The interlayer coupling effect in the van der Waals (vdW) heterostructures can break the symmetry of MnPSe3 and induce the spin splitting. Here, we simulate the MnPSe3/GeC vdW heterostructure and investigate the effects of the stacking and interlayer coupling effect on both spin and valley splitting. The excitation mode of valley excitons is greatly related to the stacking of heterostructures. The interlayer excitons can only be formed in one of the configurations with C3 symmetry according to optical selection transition rule. The interlayer coupling effect is modulated by changing interlayer distance. With vertical compressive strain (−20%), the spin and valley splitting higher than 50 meV and 30 meV can be obtained in MnPSe3/GeC vdW heterostructures, respectively. This study suggests that the stacking and vertical strain are both efficient approaches to modulate the spin and valley splitting through the interlayer coupling effect in the vdW heterostructures.
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spelling doaj.art-70131020abe24333913319b50edde3fa2023-04-19T04:22:37ZengElsevierResults in Physics2211-37972023-05-0148106455A type-II MnPSe3/GeC heterostructure with tunable spin and valley splittingTongwei Li0Jing Chen1Kai Tian2Xin Jiang3Xinyao Wu4Haisheng Li5Weiwei Ju6Corresponding authors.; College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaCorresponding authors.; College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaThe ternary chalcogenide MnPSe3 monolayer recently gets a lot of attention because of its two nonequivalent energy valleys. The existence of spin–orbit coupling (SOC) effect can cause the valley splitting of around 24 meV. However, the spin degeneracy is still kept in MnPSe3 monolayer owing to the antiferromagnetic coupling between Mn2+ ions. The interlayer coupling effect in the van der Waals (vdW) heterostructures can break the symmetry of MnPSe3 and induce the spin splitting. Here, we simulate the MnPSe3/GeC vdW heterostructure and investigate the effects of the stacking and interlayer coupling effect on both spin and valley splitting. The excitation mode of valley excitons is greatly related to the stacking of heterostructures. The interlayer excitons can only be formed in one of the configurations with C3 symmetry according to optical selection transition rule. The interlayer coupling effect is modulated by changing interlayer distance. With vertical compressive strain (−20%), the spin and valley splitting higher than 50 meV and 30 meV can be obtained in MnPSe3/GeC vdW heterostructures, respectively. This study suggests that the stacking and vertical strain are both efficient approaches to modulate the spin and valley splitting through the interlayer coupling effect in the vdW heterostructures.http://www.sciencedirect.com/science/article/pii/S2211379723002486MnPSe3vdW heterostructuresSpin splittingValley splittingInterlayer coupling effect
spellingShingle Tongwei Li
Jing Chen
Kai Tian
Xin Jiang
Xinyao Wu
Haisheng Li
Weiwei Ju
A type-II MnPSe3/GeC heterostructure with tunable spin and valley splitting
Results in Physics
MnPSe3
vdW heterostructures
Spin splitting
Valley splitting
Interlayer coupling effect
title A type-II MnPSe3/GeC heterostructure with tunable spin and valley splitting
title_full A type-II MnPSe3/GeC heterostructure with tunable spin and valley splitting
title_fullStr A type-II MnPSe3/GeC heterostructure with tunable spin and valley splitting
title_full_unstemmed A type-II MnPSe3/GeC heterostructure with tunable spin and valley splitting
title_short A type-II MnPSe3/GeC heterostructure with tunable spin and valley splitting
title_sort type ii mnpse3 gec heterostructure with tunable spin and valley splitting
topic MnPSe3
vdW heterostructures
Spin splitting
Valley splitting
Interlayer coupling effect
url http://www.sciencedirect.com/science/article/pii/S2211379723002486
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