The Analysis of SEU in Nanowire FETs and Nanosheet FETs
The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occur...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/7/863 |