Magneto-transport and electronic structures of BaZnBi2
We report the magneto-transport properties and electronic structures of BaZnBi _2 . BaZnBi _2 is a quasi-two-dimensional material with metallic behavior. Transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov–de Haas (SdH) oscillation at low temperature and high...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2017-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/aa95e7 |
| _version_ | 1827873469840228352 |
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| author | Yi-Yan Wang Peng-Jie Guo Qiao-He Yu Sheng Xu Kai Liu Tian-Long Xia |
| author_facet | Yi-Yan Wang Peng-Jie Guo Qiao-He Yu Sheng Xu Kai Liu Tian-Long Xia |
| author_sort | Yi-Yan Wang |
| collection | DOAJ |
| description | We report the magneto-transport properties and electronic structures of BaZnBi _2 . BaZnBi _2 is a quasi-two-dimensional material with metallic behavior. Transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov–de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combined with the trivial Berry phase extracted from the SdH oscillation, BaZnBi _2 is suggested as a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi _2 . |
| first_indexed | 2024-03-12T16:37:28Z |
| format | Article |
| id | doaj.art-703ee41e31f245148723deeb61f7d3f7 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:37:28Z |
| publishDate | 2017-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-703ee41e31f245148723deeb61f7d3f72023-08-08T14:48:05ZengIOP PublishingNew Journal of Physics1367-26302017-01-01191212304410.1088/1367-2630/aa95e7Magneto-transport and electronic structures of BaZnBi2Yi-Yan Wang0Peng-Jie Guo1Qiao-He Yu2Sheng Xu3Kai Liu4Tian-Long Xia5Department of Physics, Renmin University of China , Beijing 100872, People’s Republic of China; Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People’s Republic of ChinaDepartment of Physics, Renmin University of China , Beijing 100872, People’s Republic of China; Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People’s Republic of ChinaDepartment of Physics, Renmin University of China , Beijing 100872, People’s Republic of China; Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People’s Republic of ChinaDepartment of Physics, Renmin University of China , Beijing 100872, People’s Republic of China; Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People’s Republic of ChinaDepartment of Physics, Renmin University of China , Beijing 100872, People’s Republic of China; Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People’s Republic of ChinaDepartment of Physics, Renmin University of China , Beijing 100872, People’s Republic of China; Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People’s Republic of ChinaWe report the magneto-transport properties and electronic structures of BaZnBi _2 . BaZnBi _2 is a quasi-two-dimensional material with metallic behavior. Transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov–de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combined with the trivial Berry phase extracted from the SdH oscillation, BaZnBi _2 is suggested as a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi _2 .https://doi.org/10.1088/1367-2630/aa95e7linear magnetoresistancetopological materialsShubnikov–de Haas oscillation |
| spellingShingle | Yi-Yan Wang Peng-Jie Guo Qiao-He Yu Sheng Xu Kai Liu Tian-Long Xia Magneto-transport and electronic structures of BaZnBi2 New Journal of Physics linear magnetoresistance topological materials Shubnikov–de Haas oscillation |
| title | Magneto-transport and electronic structures of BaZnBi2 |
| title_full | Magneto-transport and electronic structures of BaZnBi2 |
| title_fullStr | Magneto-transport and electronic structures of BaZnBi2 |
| title_full_unstemmed | Magneto-transport and electronic structures of BaZnBi2 |
| title_short | Magneto-transport and electronic structures of BaZnBi2 |
| title_sort | magneto transport and electronic structures of baznbi2 |
| topic | linear magnetoresistance topological materials Shubnikov–de Haas oscillation |
| url | https://doi.org/10.1088/1367-2630/aa95e7 |
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