| Summary: | A new capacitive coupling method to enhance the driving performance of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) in high-resolution applications is presented. The gate voltage can be enlarged by the entirely transmitted high voltage of a global direct current power source line (VDD). Established models that are based on the measured electrical characteristics of fabricated a-Si:H TFTs with different aspect ratios are used to evaluate the feasibility of this proposed method in the gate driver. The maximum voltage of the gate voltage can be increased from 37.3 V to 47.6 V when VDD is set to 20 V, improving the driving capability of the gate driver by more than 17%, based on the specifications of a 5.99 inch HD + (720 × 1440) panel at a frame rate of 120 Hz.
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